首页 >BF540/X>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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NPN9GHzwidebandtransistor DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPNSILICONRFTRANSISTOR Feature Highgain:︱S21e︱2TYP.Valueis13dB@VCE=8V，IC=40mA，f=0.9GHz Lownoise:NFTYP.Valueis1.8dB@VCE=10V，IC=10mA，f=0.9GHz fT(TYP.):TYP.Valueis9GHz@VCE=8V，IC=40mA，f=1GHz | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | SKTECHNOLGY | ||
iscSiliconNPNRFTransistor DESCRIPTION •LowNoiseFigure NF=1.3dBTYP.@VCE=8V,IC=10mA,f=900MHz •HighGain ︱S21︱2=16dBTYP.@VCE=8V,IC=40mA,f=900MHz •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Designedforuseinlownoise,h | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
NPN9GHzWidebandTransistor ■Features ●Highpowergain ●Lownoisefigure ●Hightransitionfrequency ●Goldmetallizationensuresexcellentreliability. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
iscSiliconNPNRFTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscSiliconNPNRFTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
NPN9GHzwidebandtransistor DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips |
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