首页 >BF420-R>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NPNSiliconRFTransistor(ForhighgainlownoiseamplifiersForoscillatorsupto10GHz) NPNSiliconRFTransistor •Forhighgainlownoiseamplifiers •Foroscillatorsupto10GHz •NoisefigureF=1.05dBat1.8GHzoutstandingGms=20dBat1.8GHz •TransitionfrequencyfT=25GHz •Goldmetalizationforhighreliability •SIEGET®25-Line SiemensGroundedEmitter | SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司 | SIEMENS | ||
NPNSiliconRFTransistor LowNoiseSiliconBipolarRFTransistor •Forhighgainandlownoiseamplifiers •MinimumnoisefigureNFmin=1.1dBat1.8GHzOutstandingGms=21dBat1.8GHz •Foroscillatorsupto10GHz •TransitionfrequencyfT=25GHz •Pb-free(RoHScompliant)andhalogen-freepackagewithvisib | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
LowNoiseSiliconBipolarRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
NPNSiliconRFTransistor ProductBrief TheBFP420FisalownoisewidebandNPNbipolarRFtransistor.ThecollectordesignsupportsvoltagesuptoVCEO=4.5VandcurrentsuptoIC=60mA.Thedeviceisespeciallysuitedformobileapplicationsinwhichlowpowerconsumptionisakeyrequirement.Thetypicaltransition | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
NPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
LowNoiseSiliconBipolarRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
iscSiliconNPNRFTransistor DESCRIPTION •HighPowerGain •HighCurrentGainBandwidthProduct •LowNoiseFigure •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •DesignedforuseinRFwidebandamplifiersandoscillators. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
NPNhigh-voltagetransistor DESCRIPTION NPNhigh-voltagetransistorinaTO-92;SOT54plasticpackage.PNPcomplement:BFV421. FEATURES •Lowcurrent(max.100mA) •Highvoltage(max.100V). APPLICATIONS •Primarilyintendedforvideoapplications(monitors). | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
HiRelNPNSiliconRFTransistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •ForHighGainLowNoiseAmplifiers •ForOscillatorsupto10GHz •NoiseFigureF=1.1dBat1.8GHz OutstandingGms=21dBat1.8GHz •Hermeticallysealedmicrowavepackage •TransitionFrequencyfT=22G | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
HiRelNPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
