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BF245C

N-ChannelAmplifiers

N-ChannelAmplifiers •ThisdeviceisdesignedforVHF/UHFamplifiers. •Sourcedfromprocess50.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

BF245C

N-Channeljunctionfield-EffectTransistors

N-ChannelSiliconJunctionField-EffectTransistors BF245A,BandCareN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41868).Theyareparticularlysuitableforuseindc,AFandRFamplifiers.

SIEMENSSiemens Semiconductor Group

西门子德国西门子股份公司

BF245C

N-channelsiliconfield-effecttransistors

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BF245C

JFETPROELECTRONSERIES

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

BF245C

JFETVHF/UHFAmplifiersN-Channel-Depletion

JFETVHF/UHFAmplifiersN–Channel—Depletion

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BF245C

IM-ChannelJunctionField-EffectTransistors

N-ChannelSiliconJunctionField-EffectTransistors BF245A,BandCareN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41868).Theyareparticularlysuitableforuseindc,AFandRFamplifiers.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

BFQ245

PNPvideotransistor

DESCRIPTION PNPsilicontransistorencapsulatedina3-leadplasticSOT128Bpackage. APPLICATIONS •Primarilyintendedforcascodeoutputandbufferstagesinhighresolutioncolourmonitors.

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BLF245

VHFpowerMOStransistor

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BLF245

RFPOWERMOSFET

DESCRIPTION: TheASIBLF245isaverticalD-MOStransistordesignedforlargesignalamplifierapplicationsintheVHFfrequencyrange. FEATURESINCLUDE: •PG=13dBTypicalat175MHz •30:1LoadVSWRCapability •Omnigold™metalizationsystem

ASI

Advanced Semiconductor

BLF245B

VHFpush-pullpowerMOStransistor

DESCRIPTION Dualpush-pullsiliconN-channelenhancementmodeverticalD-MOStransistordesignedforlargesignalamplifierapplicationsintheVHFfrequencyrange. FEATURES •Highpowergain •Easypowercontrol •Goodthermalstability •Goldmetallizationensuresexcellentreliability.

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

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