丝印：1L*；Package：SOT-143B；NPN general purpose double transistor

DESCRIPTION NPN double transistor in a SOT143B plastic package. PNP complement: BCV62. FEATURES • Low current (max. 100 mA) • Low voltage (max. 30 V) • Matched pairs. APPLICATIONS • For use in applications where the working point must be independent of temperature •

文件：50.94 Kbytes 页数：8 Pages

PHI

飞利浦

丝印：1Lt；Package：SOT-143；NPN Silicon Double Transistor

NPN Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBEmatching • High current gain • Low collector-emitter saturation voltage • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

文件：49.31 Kbytes 页数：5 Pages

Infineon

英飞凌

丝印：1LP；Package：SOT-143；NPN general purpose double transistor

■ Features ● High current gain ● Low collector-emitter saturation voltage

文件：131.71 Kbytes 页数：3 Pages

KEXIN

科信电子

丝印：3LP；Package：SOT-143；PNP general purpose double transistor

■ Features ● High current gain ● Low collector-emitter saturation voltage

文件：104.34 Kbytes 页数：3 Pages

KEXIN

科信电子

NPN Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching)

NPN Silicon Double Transistors Preliminary Data ●To be used as a current mirror ●Good thermal coupling andVBEmatching ●High current gain ●Low emitter-saturation voltage

文件：95.1 Kbytes 页数：5 Pages

SIEMENS

西门子

丝印：1L；Package：SOT143B；NPN general-purpose double transistors

Features * Low current (max. 100 mA) * Low voltage (max. 30 V) * Matched pairs

文件：2.29281 Mbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PNP general-purpose double transistors

Features and benefits * Low current (max. 100 mA) * Low voltage (max. 30 V) * Matched pairs * AEC-Q101 qualified * Small SMD plastic package

文件：801.55 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：1Lt；Package：SOT-143；NPN Silicon Double Transistor

文件：181.56 Kbytes 页数：7 Pages

Infineon

英飞凌

丝印：1Lt；Package：SOT-143；NPN Silicon Double Transistor

文件：536.49 Kbytes 页数：7 Pages

Infineon

英飞凌

丝印：1L*；Package：SOT-143B；Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦