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BD135

Plastic-EncapsulatedTransistors

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:1.25W(Tamb=25℃) Collectorcurrent ICM:1.5A Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TELTokyo Electron Ltd.

东电电子东京电子有限公司

BD135

Complementarylowvoltagetransistor

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

BD135

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-126package •Highcurrent •ComplementtotypeBD136/138/140 APPLICATIONS •Driverstagesinhigh-fidelityamplifiers andtelevisioncircuits

SAVANTIC

Savantic, Inc.

BD135

PlasticMediumPowerSiliconNPNTransistor

PlasticMediumPowerSiliconNPNTransistor Thisseriesofplastic,medium−powersiliconNPNtransistorsaredesignedforuseasaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. Features •Pb−FreePackagesareAvailable •DCCurrentGain−hFE=40(Min)@

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BD135

EPITAXIALPLANARNPNTRANSISTOR

GENERALPURPOSEAPPLICATION. FEATURES •HighCurrent.(Max.:1.5A) •LowVoltage(Max.:45V) •DCCurrentGain:hFE=40Min.@IC=0.15A •ComplementarytoBD136.

KECKEC CORPORATION

KEC株式会社

BD135

PowerTransistorsNPNSilicon45,60,80Volts

Features •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •DCCurrentGain-hFE=40(Min)@IC=150mAdc •ComplementarywithBD136,BD138,BD140

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

BD135

NPNSILICONTRANSISTOR

DESCRIPTION: TheCENTRALSEMICONDUCTORBD135,BD137,andBD139areNPNSiliconEpitaxialPlanarTransistorsdesignedforaudioamplifierandswitchingapplications. MARKING:FULLPARTNUMBER

CentralCentral Semiconductor Corp

美国中央半导体

BD135

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-126package •Highcurrent •ComplementtotypeBD136/138/140 APPLICATIONS •Driverstagesinhigh-fidelityamplifiers andtelevisioncircuits

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

BD135

TO-126Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●HighCurrent ●ComplementToBD136,BD138AndBD140

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

BD135

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES ◾HighCurrent(1.5A) ◾LowVoltage(80V)

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

详细参数

  • 型号:

    BCR135T

  • 制造商:

    INFINEON

  • 制造商全称:

    Infineon Technologies AG

  • 功能描述:

    NPN Silicon Digital Transistor

供应商型号品牌批号封装库存备注价格
INFINEON
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
Infineon
24+
SC75
3600
绝对原装!现货热卖!
询价
Infineon
24+
SC75
6336
询价
INFINEON
2016+
SOT523
3000
只做原装,假一罚十,公司可开17%增值税发票!
询价
INFINEON
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
SOT-423
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
INFINEON
23+
SC75-3
63000
原装正品现货
询价
INFINEON
20+
SOT523
32970
原装优势主营型号-可开原型号增税票
询价
Infineon(英飞凌)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
有强/YQ
23+
SOT-523
50000
全新原装正品现货,支持订货
询价
更多BCR135T供应商 更新时间2025-7-19 15:01:00