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BCP56T

80 V, 1 A PNP medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BCP56T

80 V, 1 A NPN medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BCP56T

80 V, 1 A NPN medium power transistors

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BCP56T_SER

80 V, 1 A NPN medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BCP56T1

MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT

TheseNPNSiliconEpitaxialtransistorsaredesignedforuseinaudioamplifierapplications.ThedeviceishousedintheSOT-223package,whichisdesignedformediumpowersurfacemountapplications. •HighCurrent:1.0Amp •TheSOT-223packagecanbesolderedusingwaveorreflow.Thef

MotorolaMotorola, Inc

摩托罗拉

BCP56T1

NPN Silicon Epitaxial Transistor

TheseNPNSiliconEpitaxialtransistorsaredesignedforuseinaudioamplifierapplications.ThedeviceishousedintheSOT-223package,whichisdesignedformediumpowersurfacemountapplications. Features •Pb−FreePackageisAvailable •HighCurrent:1.0Amp •TheSOT-223packagec

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BCP56T1G

NPN Silicon Epitaxial Transistor

NPNSiliconEpitaxialTransistor TheseNPNSiliconEpitaxialtransistorsaredesignedforuseinaudioamplifierapplications.ThedeviceishousedintheSOT−223package,whichisdesignedformediumpowersurfacemountapplications. Features •HighCurrent:1.0A •TheSOT−223packagecanbe

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BCP56T1G

NPN Silicon Epitaxial Transistor

NPNSiliconEpitaxialTransistor TheseNPNSiliconEpitaxialtransistorsaredesignedforuseinaudioamplifierapplications.ThedeviceishousedintheSOT−223package,whichisdesignedformediumpowersurfacemountapplications. Features •HighCurrent:1.0A •TheSOT−223packagecanbe

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BCP56T1G

NPN Silicon Epitaxial Transistor

NPNSiliconEpitaxialTransistor TheseNPNSiliconEpitaxialtransistorsaredesignedforuseinaudioamplifierapplications.ThedeviceishousedintheSOT−223package,whichisdesignedformediumpowersurfacemountapplications. Features •HighCurrent:1.0A •TheSOT−223packagecanbe

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BCP56T1G

TRANSISTOR (NPN)

FEATURES eForAFdriverandoutputstages eHighcollectorcurrent eLowcollector-emittersaturationvoltage eoComplementarytypes:BCP51...BCP53(PNP)

FUXINSEMIFuxinSemi All Rights Reserved.

富芯森美富芯森美半导体(深圳)有限公司

BCP56T3

NPN Silicon Epitaxial Transistor

TheseNPNSiliconEpitaxialtransistorsaredesignedforuseinaudioamplifierapplications.ThedeviceishousedintheSOT-223package,whichisdesignedformediumpowersurfacemountapplications. Features •Pb−FreePackageisAvailable •HighCurrent:1.0Amp •TheSOT-223packagec

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BCP56T3G

NPN Silicon Epitaxial Transistor

NPNSiliconEpitaxialTransistor TheseNPNSiliconEpitaxialtransistorsaredesignedforuseinaudioamplifierapplications.ThedeviceishousedintheSOT−223package,whichisdesignedformediumpowersurfacemountapplications. Features •HighCurrent:1.0A •TheSOT−223packagecanbe

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BCP56T3G

NPN Silicon Epitaxial Transistor

NPNSiliconEpitaxialTransistor TheseNPNSiliconEpitaxialtransistorsaredesignedforuseinaudioamplifierapplications.ThedeviceishousedintheSOT−223package,whichisdesignedformediumpowersurfacemountapplications. Features •HighCurrent:1.0A •TheSOT−223packagecanbe

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BCP56TA

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features •BVCEO>45V,60V&80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

BCP56TF

80 V, 1 A NPN medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BCP56T-Q

80 V, 1 A NPN medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BCP56T-Q_SER

80 V, 1 A NPN medium power transistors

Featuresandbenefits •HighcollectorcurrentcapabilityICandICM •Threecurrentgainselections •Highpowerdissipationcapability •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BCP56T3G

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 封装/外壳:TO-261-4,TO-261AA 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS NPN 80V 1A SOT223

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BCP56TA

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 封装/外壳:TO-261-4,TO-261AA 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS NPN 80V 1A SOT223-3

PAMDiodes Incorporated

龙鼎威

BCP56TF

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 封装/外壳:TO-261-4,TO-261AA 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS NPN 80V 1A SOT223

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

详细参数

  • 型号:

    BCP56T

  • 功能描述:

    TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | SOT-223

供应商型号品牌批号封装库存备注价格
NXP/恩智浦
2021+
SOT-223
9000
原装现货,随时欢迎询价
询价
NEXPERIA/安世
SOT223
7906200
询价
NXP(恩智浦)
23+
SOT-223
125048
原厂可订货,技术支持,直接渠道。可签保供合同
询价
NXP(恩智浦)
23+
SOT-223
129316
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
ON
23+
SOT-223
18689
询价
NXP
23+
SOT-223
8650
受权代理!全新原装现货特价热卖!
询价
NEXPERIA/安世
22+
SOT-223
589000
特价原装现货,能提供更多数量 一片起订
询价
NXP/恩智浦
22+
SOT-223
20000
深圳原装现货正品有单价格可谈
询价
NXP/恩智浦
21+
SOT-223
1995
原装现货假一赔十
询价
NXP(恩智浦)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
更多BCP56T供应商 更新时间2024-4-28 14:00:00