首页 >BCM4201>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
BatteryBackupIC BD4201FVisabatterybackupIC.Switchthatdetectbatteryvoltageandswitchintobackuppowersupplyand3-channelregulatorareincorporatedintoasinglechip.Currentconsumptionis15µA(Max.).ThisICisperfectforportableappliances. zFeatures 1)LowquiescentcurrentNormaloperat | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
350mAHighEfficiencyStepDownLEDDriver | Catalyst Catalyst Semiconductor | Catalyst | ||
350mAHighEfficiencyStepDownLEDDriver | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
HighEfficiencyStepDownLEDDriver | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
350mAHighEfficiencyStepDownLEDDriver | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-40V,-28A,RDS(ON)=26mΩ@VGS=-10V. RDS(ON)=36mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
P-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-40V,-7.5A,RDS(ON)=28mW@VGS=-10V. RDS(ON)=38mW@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Leadfreeproductisacquired. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
P-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -40V,-7.5A,RDS(ON)=28mW@VGS=-10V. RDS(ON)=38mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS |
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