THE MOST HIGHLY INTEGRATED SILICON SOLUTION FOR FEATURE ENGANCED VOICE OVER IP ENTERPRISE PHONES

文件：121.21 Kbytes 页数：2 Pages

BOARDCOM

博通

ENTERPRISE IP PHONE CHIP

Broadcom

博通

N-channel dual-gate MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1101, BF1101R and BF1101WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

文件：128.13 Kbytes 页数：16 Pages

PHI

飞利浦

N-channel dual-gate MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1101, BF1101R and BF1101WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

文件：128.13 Kbytes 页数：16 Pages

PHI

飞利浦