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BC856BDW1T1

Dual General Purpose Transistors(PNP Duals)

DualGeneralPurposeTransistors PNPDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT–363/SC–88whichisdesignedforlowpowersurfacemountapplications.

LRCLeshan Radio Co., Ltd

乐山无线电乐山无线电股份有限公司

BC856BDW1T1

Dual General Purpose Transistors

DualGeneralPurposeTransistors PNPDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. •DeviceMarking: BC856BDW1T1=3B BC857BDW1T1=3F BC857CDW1T1=3G

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BC856BDW1T1

Dual General Purpose Transistors

DualGeneralPurposeTransistors PNPDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT–363/SC–88whichisdesignedforlowpowersurfacemountapplications.

ETLE-Tech Electronics LTD

亞歷電子亞歷電子有限公司

BC856BDW1T1

Dual General Purpose Transistors

DualGeneralPurposeTransistors PNPDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. Features •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompli

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BC856BDW1T1D

Dual General Purpose Transistors

DualGeneralPurposeTransistors PNPDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. •DeviceMarking: BC856BDW1T1=3B BC857BDW1T1=3F BC857CDW1T1=3G

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BC856BDW1T1D

Dual General Purpose Transistors

DualGeneralPurposeTransistors PNPDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. Features •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompli

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BC856BDW1T1G

Dual General Purpose Transistors

DualGeneralPurposeTransistors PNPDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. Features •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompli

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BC856BDW1T3G

Dual General Purpose Transistors

DualGeneralPurposeTransistors PNPDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. Features •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompli

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BC856BDW1T1G

Dual General Purpose Transistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BC856BDW1T1G

Dual General Purpose Transistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BC856BDW1T1G_16

Dual General Purpose Transistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BC856BDW1T3G

Dual General Purpose Transistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BC856BDW1T3G

Dual General Purpose Transistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

详细参数

  • 型号:

    BC856BDW1

  • 功能描述:

    两极晶体管 - BJT 100mA 80V Dual PNP

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
ON
08+
SC88EUTD
6000
询价
ON
2020+
SOT-363
2580
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
ETL
23+
NA
39960
只做进口原装,终端工厂免费送样
询价
23+
N/A
49300
正品授权货源可靠
询价
ON
2010+
SOT363
6000
绝对原装自己现货
询价
ON
2020+
SOT-363
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
ON
2023+
SOT363
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
ON
18+
SOT363
9860
全新原装现货/假一罚百!
询价
ON
21+
SOT-363
2570
原装现货假一赔十
询价
ON
22+
SOT-363
32350
原装正品 假一罚十 公司现货
询价
更多BC856BDW1供应商 更新时间2024-5-22 16:30:00