BC856AW

65V,100mANPNgeneral-purposetransistors

Featuresandbenefits •General-purposetransistors •SMDplasticpackage •Twodifferentgainselections

BC856AW

PNPgeneralpurposetransistors

FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.65V).

BC856AWG

PNPSiliconEpitaxialPlanarTransistor

BC856AW-G

SmallSignalTransistor

Features -Ideallysuitedforautomaticinsertion -ForSwitchingandAFAmplifierApplications -Powerdissipation PCM:0.15W(@TA=25°C) -Collectorcurrent ICM:-0.1A -Collector-basevoltage VCBO:BC856W=-80V BC857W=-50V BC858W=-30V -Operatingand

BC856AW-Q

65V,100mAPNPgeneral-purposetransistors

1.Generaldescription PNPgeneral-purposetransistorsinaverysmallSOT323(SC-70),Surface-MountedDevice(SMD) plasticpackage. Table1.Productoverview TypenumberPackage NexperiaJEDEC NPNcomplement BC856W-QBC846W-Q BC856AW-QBC846AW-Q BC856BW-QBC846BW-Q BC857W-QBC847W-Q BC

BC856B

SurfacemountSi-EpitaxialPlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagin

BC856B

PNPSURFACEMOUNTSMALLSIGNALTRANSISTOR

Features ●IdeallySuitedforAutomaticInsertion ●ComplementaryNPNTypes:BC846–BC848 ●ForSwitchingandAFAmplifierApplications ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.GreenDevice(Note3) ●QualifiedtoAEC-Q101StandardsforH

BC856B

SwitchingandAmplifierApplications

Features •SwitchingandAmplifierApplications •Suitableforautomaticinsertioninthickandthin-filmcircuits •LowNoise:BC859,BC860 •ComplementtoBC846...BC850

BC856B

PNPSURFACEMOUNTSMALLSIGNALTRANSISTOR

BC856B

PNPSiliconAFTransistors(ForAFinputstagesanddriverapplicationsHighcurrentgainLowcollector-emittersaturationvoltage)

Features ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC846,BC847, BC849,BC850(NPN)