BC848BT

NPN Silicon AF Transistors

NPNSiliconAFTransistors ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes: BC856T,BC857T, BC858T,BC859T,BC860T

BC848BT116

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 30V 0.1A SST3

Rohm Semiconductor

BC848BW

GeneralPurposeTransistorNPNSilicon

GeneralPurposeTransistor NPNSilicon PbLead(Pb)-Free

BC848BW

SurfacemountSi-EpitaxialPlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation200mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

BC848BW

NPNSiliconAFTransistors

NPNSiliconAFTransistors ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC856W,BC857W,BC858W,BC859W,BC860W(PNP)

BC848BW

NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR

Features •IdeallySuitedforAutomaticInsertion •ComplementaryPNPTypes:BC856W–BC858W •ForSwitchingandAFAmplifierApplications •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.GreenDevice(Note3) •QualifiedtoAEC-Q101Standardsfor

BC848BW

NPNGeneralPurposeTransistor

Features 1)BVCEOminimumis30V(IC=1mA) 2)ComplementstheBC858B/BC858BW.

BC848BW

NPNPlasticEncapsulateTransistor

FEATURES •Ideallysuitedforautomaticinsertion •ForSwitchingandAFAmplifierApplications

BC848BW

NPNSiliconAFTransistors

BC848BW

NPNGeneralPurposeTransistors