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BC847PNW

NPN/PNPMulti-ChipTransistor

FEATURE ●EpitaxialDieConstruction

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

BC847-Q

45V,100mANPNgeneral-purposetransistors

Featuresandbenefits •General-purposetransistors •SMDplasticpackages •Threedifferentgainselections •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC847QAPN

45V,100mANPN/PNPgeneral-purposetransistor

Featuresandbenefits •Reducescomponentcount •Reducespickandplacecosts •AEC-Q101qualified •Lowpackageheightof0.37mm

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC847QAS

45V,200mANPN/NPNgeneral-purposetransistor

Featuresandbenefits •Reducescomponentcount •Reducespickandplacecosts •AEC-Q101qualified •Lowpackageheightof0.37mm

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC847RA

45V,100mANPN/NPNgeneral-purposedoubletransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC847RAPN

45V,100mANPN/PNPgeneral-purposedoubletransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC847S

NPNMulti-ChipGeneralPurposeAmplifier

NPNMulti-ChipGeneralPurposeAmplifier Thisdeviceisdesignedforgeneralpurposeamplifierapplicationsatcollectorcurrentsto200mA.SourcedfromProcess07.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

BC847S

SurfacemountSi-EpitaxialPlanarTransistors

Features Twotransistorsinonepackage GeneralPurpose ComplianttoRoHS,REACH,ConflictMinerals1) TypicalApplications Signalprocessing,Switching,Amplification Commercialgrade1) MechanicalData1) Tapedandreeled3000/7“ Weightapprox.0.01g Case

DiotecDiotec Semiconductor

德欧泰克

BC847S

NPNSiliconAFTransistorArray

NPNSiliconAFTransistorArrays •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Two(galvanic)internalisolatedtransistors withgoodmatchinginonepackage •BC846S/U,BC847S:Fororientationinreelsee packageinfo

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BC847S

NPNSiliconAFTransistorArray(ForAFinputstagesanddriverapplicationsHighcurrentgain)

NPNSiliconAFTransistorArray •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Two(galvanic)internalisolatedTransistorswithhighmatchinginonepackage

SIEMENSSiemens Semiconductor Group

西门子德国西门子股份公司

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