首页 >BC847DG>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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45V,100mANPN/NPNgeneral-purposetransistor Features *Lowcollectorcapacitance *Lowcollector-emittersaturationvoltage *Closelymatchedcurrentgain *Reducesnumberofcomponentsandboardspace *Nomutualinterferencebetweenthetransistors *AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
GeneralPurposeTransistors | FS First Silicon Co., Ltd | FS | ||
NPNgeneralpurposetransistors DESCRIPTION NPNtransistorencapsulatedinanultrasmallSC-89(SOT490)plasticSMDpackage. PNPcomplements:BC856F,BC857FandBC858Fseries. FEATURES •PowerdissipationcomparabletoSOT23 •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitching | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
NPNSiliconTransistor(GeneralpurposeapplicationSwitchingapplication) Descriptions •Generalpurposeapplication •Switchingapplication Features •Highvoltage:VCEO=45V •ComplementarypairwithBC857F | AUK AUK corp | AUK | ||
NPNgeneralpurposetransistors DESCRIPTION NPNgeneralpurposetransistorinaSOT883leadlessultrasmallplasticpackage. PNPcomplement:BC857Mseries. FEATURES •Leadlessultrasmallplasticpackage(1mm×0.6mm×0.5mm) •Boardspace1.3×0.9mm •PowerdissipationcomparabletoSOT23. APPLICATIONS •Generalpu | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
COMPLEMENTARYPAIRSMALLSIGNALSURFACEMOUNTTRANSISTOR Features •EpitaxialDieConstruction •TwoInternallyIsolatedNPN/PNPTransistorsinOnePackage •IdealforMediumPowerAmplificationandSwitching •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.GreenDevi | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
NPN/PNPSiliconAFTransistorArray NPN/PNPSiliconAFTransistorArrays •ForAFinputstageanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Two(galvanic)internalisolatedNPN/PNP transistorinonepackage •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
COMPLEMENTARYPAIRSMALLSIGNALSURFACEMOUNTTRANSISTOR | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
ComplementarySurfaceMountGeneralPurposeSi-PlanarTransistors Features TwocomplementarytransistorsinonepackageGeneralPurpose ComplianttoRoHS,REACH, ConflictMinerals1) TypicalApplications Signalprocessing,Switching,Amplification Commercialgrade1) MechanicalData1) Tapedandreeled3000/7“ Weightapprox.0.01 | Diotec Diotec Semiconductor | Diotec | ||
Multi-ChipTransistor FEATURE •EpitaxialDieConstruction •TwointernalisolatedNPN/PNPtransistorsinonepackage •PowerDissipation PCM:0.2W(Temp.=25˚C) •CollectorCurrent ICM:0.1A •Collector-baseVoltage V(BR)CBO:50/-50V •Operating&StorageJunctionTemperature TJ,TSTG: | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS |
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