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BC847BPDW1T1G

Dual General Purpose Transistors(NPN/PNP Duals)

Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. Features •Pb−FreePackageisAvailable

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BC847BPDW1T1G

Dual General Purpose Transistors

Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. Features •SPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements;AEC−Q101Qu

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BC847BPDW1T1G

Dual General Purpose Transistors

Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. Features •SPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements;AEC−Q101Qu

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BC847BPDW1T1G

Dual General Purpose Transistors

Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. Features •SPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements;AEC−Q101Qu

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BC847BPDW1T1

DualGeneralPurposeTransistors(NPN/PNPDuals)

Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. Features •Pb−FreePackageisAvailable

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

LBC847BPDW1T1

DualGeneralPurposeTransistorsNPN/PNPDuals(Complimentary)

LRCLeshan Radio Co., Ltd

乐山无线电乐山无线电股份有限公司

LRC

LBC847BPDW1T1G

DualGeneralPurposeTransistors

LRCLeshan Radio Co., Ltd

乐山无线电乐山无线电股份有限公司

LRC

LBC847BPDW1T1G

DualGeneralPurposeTransistorsNPN/PNPDuals(Complimentary)

LRCLeshan Radio Co., Ltd

乐山无线电乐山无线电股份有限公司

LRC

SBC847BPDW1T1G

DualGeneralPurposeTransistors

Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. Features •SPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements;AEC−Q101Qu

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SBC847BPDW1T1G

DualGeneralPurposeTransistors

Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT−363/SC−88whichisdesignedforlowpowersurfacemountapplications. Features •SPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements;AEC−Q101Qu

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

详细参数

  • 型号:

    BC847BPDW1T1G

  • 功能描述:

    两极晶体管 - BJT 100mA 50V Dual Complementary

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
ON/安森美
22+
SOT363
48000
原装正品
询价
ON
23+
/
15000
只做原装现货工厂免费出样欢迎咨询订单
询价
onsemi
23+
6-TSSOP,SC-88,SOT-363
30000
晶体管-分立半导体产品-原装正品
询价
ON
22+
SOT363
23000
全新原装现货,量大特价,原厂正规渠道!
询价
ON/安森美
21+
NA
771000
只做原装,假一罚十
询价
ON/安森美
21+
SOT-363
25000
全新原装正品,特价供应,样片可出,可开发票,欢迎咨询
询价
ON
21+
SOT23
309000
询价
ON/安森美
22+
SOT363
3000
只做原装进口 免费送样!!
询价
ON/安森美
SOT-363
21+
600000
航宇科工半导体-中国航天科工集团战略合作伙伴!
询价
ON/安森美
21+
SOT363
9800
只做原装正品假一赔十!正规渠道订货!
询价
更多BC847BPDW1T1G供应商 更新时间2024-4-25 15:38:00