丝印：1Ft；Package：SOT-363；SOT-363 Plastic-Encapsulate Transistors

APPLICATION This device is designed for general purpose amplifier applications

文件：734.23 Kbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：1FT；Package：SOT-363；Plastic-Encapsulate Transistors

FEATURES  Two transistors in one package  Reduces number of components and board space  No mutual interference between the transistors

文件：606.83 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

Dual General Purpose Transistors

Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.

文件：929.83 Kbytes 页数：6 Pages

YEASHIN

亚昕科技

General Purpose Transistor NPN Duals

General Purpose Transistor NPN Duals

文件：201.5 Kbytes 页数：6 Pages

WEITRON

丝印：1F；Package：SOT363；NPN Silicon Epitaxial General Purpose Transistors

文件：2.41026 Mbytes 页数：15 Pages

FUTUREWAFER

FutureWafer Tech Co.,Ltd

Dual General Purpose Transistors

Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.

文件：459.88 Kbytes 页数：5 Pages

ETL

亚历电子

Dual General Purpose Transistors

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. • Device Marking: BC846BDW1T1 = 1B BC847BDW1T1 = 1F BC848CDW1T1 = 1L Features • Pb−Free Package is Avail

文件：106.43 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Dual General Purpose Transistors

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：133.42 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Dual General Purpose Transistors

Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • S and NSV Prefixes for Automotive and Other Applications Requiri

文件：144.9 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

Dual General Purpose Transistors

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. • Device Marking: BC846BDW1T1 = 1B BC847BDW1T1 = 1F BC848CDW1T1 = 1L Features • Pb−Free Package is Avail

文件：106.43 Kbytes 页数：6 Pages

ONSEMI

安森美半导体