BC817U-A

Marking：6A；Package：SOT-323；General Purpose Transistors

GeneralPurposeTransistors NPNSilicon FEATURE ●CollectorcurrentcapabilityIC=500mA. ●Collector-emittervoltageVCEO(max)=45V. ●Generalpurposeswitchingandamplification. ●PNPcomplement:LBC807Series. ●Pb-FreePackageisavailable.

BC817U-B

GeneralPurposeTransistors

GeneralPurposeTransistors NPNSilicon FEATURE ●CollectorcurrentcapabilityIC=500mA. ●Collector-emittervoltageVCEO(max)=45V. ●Generalpurposeswitchingandamplification. ●PNPcomplement:LBC807Series. ●Pb-FreePackageisavailable.

BC817U-C

GeneralPurposeTransistors

GeneralPurposeTransistors NPNSilicon FEATURE ●CollectorcurrentcapabilityIC=500mA. ●Collector-emittervoltageVCEO(max)=45V. ●Generalpurposeswitchingandamplification. ●PNPcomplement:LBC807Series. ●Pb-FreePackageisavailable.

BC817UPN

NPN/PNPSiliconTransistorArray

NPNSiliconAFTransistorArray •ForAFstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Two(galvanic)internalisolatedNPN/PNPtransistorsinonepackage •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101

BC817UPN

NPNSiliconAFTransistorArray

BC817UPN

NPNSiliconAFTransistorArray

BC817V

P/NsuffixVmeansAEC-Q101qualified,e.g:BC817VP/NsuffixVmeansHalogen-free

BC817W

SurfacemountSi-EpitaxialPlanarTransistors

Features GeneralPurposeThreecurrentgaingroupsComplianttoRoHS,REACH,ConflictMinerals1) TypicalApplications Signalprocessing,Switching,AmplificationCommercialgradeSuffix-Q:AEC-Q101compliant1)Suffix-AQ:inAEC-Q101qualification1) MechanicalData1) Tapedan

BC817W

NPNTransistorEpitaxialPlanarTransistor

Description TheBC817WisdesignedforswitchingandAFamplifierapplication,suitablefordriverstoragesandlowpoweroutputstorages. Features *ForGeneralAFAppliacations *HighCollectorCurrent *HighCurrentGain *LowCollector-EmitterSaturationVoltage

BC817W

NPNSiliconEpitaxialPlanarTransistors

NPNSiliconEpitaxialPlanarTransistorsforgeneralpurposeandswitchingapplications Thesetransistorsaresubdividedintothreegroups–16,-25,-40accordingtotheircurrentgain.