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BC817-25W

NPN general purpose transistor

FEATURES ●Highcollectorcurrent. ●Highcurrentgain. ●Lowcollector-emittersaturationvoltage. ●Complementarytypes:BC807W,BC808W. APPLICATIONS ●Generalpurposeswitchingandamplificationapplication.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BC817-25W

NPN Silicon General Purpose Transistors

Features •Capableof0.2WattsofPowerDissipation. •Collector-current0.5A •ThermalResistanceFromJunctionToAmbient:625OC/W •Operatingandstoragejunctiontemperaturerange:-55OCto+150OC •LeadFreeFinish/RohsCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformati

MCCMicro Commercial Components

美微科美微科半导体公司

BC817-25W

45 V, 500 mA PNP general-purpose transistors

Featuresandbenefits •Highcurrent •Threecurrentgainselections

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC817-25W

45 V, 500 mA NPN general-purpose transistors

Featuresandbenefits •Highcurrent •Threecurrentgainselections

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC817-25W

NPN Silicon AF Transistors

NPNSiliconAFTransistors ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC807W,BC808W(PNP)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BC817-25W

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features •IdeallySuitedforAutomaticInsertion •EpitaxialPlanarDieConstruction •ComplementaryPNPTypes:BC807-xxW •ForswitchingandAFAmplifierApplications •TotallyLead-Free&FullyRoHSCompliant(Note1&2) •HalogenandAntimonyFree.GreenDevice(Note3) •Quali

DIODESDiodes Incorporated

达尔科技

BC817-25W

NPN Silicon AF Transistor

●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC807,BC808(PNP)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BC817-25W

NPN Plastic Encapsulate Transistor

FEATURES •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage

SECOS

SeCoS Halbleitertechnologie GmbH

BC817-25W

NPN general purpose transistor

DESCRIPTION NPNtransistorinaSOT323plasticpackage. PNPcomplement:BC807W. FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.45V). APPLICATIONS •Generalpurposeswitchingandamplification.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BC817-25W

NPN Silicon AF Transistor (For general AF applications High collector current High current gain)

NPNSiliconAFTransistor •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytypes:BC807W,BC808W(PNP)

SIEMENS

Siemens Ltd

BC817-25W

200mW, PNP Small Signal Transistor

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

BC817-25W

包装:散装 封装/外壳:SC-70,SOT-323 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS NPN 45V 0.5A SOT323

Yangzhou Yangjie Electronic Technology Co.,Ltd

Yangzhou Yangjie Electronic Technology Co.,Ltd

Yangzhou Yangjie Electronic Technology Co.,Ltd

BC817-25W-7

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features •IdeallySuitedforAutomaticInsertion •EpitaxialPlanarDieConstruction •ComplementaryPNPTypes:BC807-xxW •ForswitchingandAFAmplifierApplications •TotallyLead-Free&FullyRoHSCompliant(Note1&2) •HalogenandAntimonyFree.GreenDevice(Note3) •Quali

DIODESDiodes Incorporated

达尔科技

BC817-25WE6327

NPN Silicon AF Transistor

NPNSiliconAFTransistor •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BC817-25W-Q

45 V, 500 mA PNP general-purpose transistors

Featuresandbenefits •Highcurrent •Threecurrentgainselections •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC817-25W-Q

45 V, 500 mA NPN general-purpose transistors

Featuresandbenefits •Highcurrent •Threecurrentgainselections •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC817-25WRF

200mW, NPN Small Signal Transistor

Features ◇Epitaxialplanardieconstruction ◇Surfacedevicetypemounting ◇Moisturesensitivitylevel1 ◇MatteTin(Sn)leadfinishwithNickel(Ni)underplate ◇PbfreeversionandRoHScompliant ◇Greencompound(Halogenfree)withsuffixGonpackingcodeandprefixGondatecode

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

BC817-25WRFG

200mW, NPN Small Signal Transistor

Features ◇Epitaxialplanardieconstruction ◇Surfacedevicetypemounting ◇Moisturesensitivitylevel1 ◇MatteTin(Sn)leadfinishwithNickel(Ni)underplate ◇PbfreeversionandRoHScompliant ◇Greencompound(Halogenfree)withsuffixGonpackingcodeandprefixGondatecode

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

BC817-25W,115

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 封装/外壳:SC-70,SOT-323 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS NPN 45V 0.5A SOT323

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC817-25W,135

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 封装/外壳:SC-70,SOT-323 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS NPN 45V 0.5A SOT323

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

产品属性

  • 产品编号:

    BC817-25W

  • 制造商:

    Yangzhou Yangjie Electronic Technology Co.,Ltd

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    散装

  • 晶体管类型:

    NPN

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    700mV @ 50mA,500mA

  • 电流 - 集电极截止(最大值):

    100nA(ICBO)

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    160 @ 100mA,1V

  • 频率 - 跃迁:

    100MHz

  • 工作温度:

    -55°C ~ 150°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    SC-70,SOT-323

  • 供应商器件封装:

    SOT-323

  • 描述:

    TRANS NPN 45V 0.5A SOT323

供应商型号品牌批号封装库存备注价格
NEXPERIA/安世
21+
SOT323
167000
NXP现货专家/原装
询价
Nexperia/安世
21+
SOT323
60000
十年信誉,只做原装,有挂就有现货!
询价
NEXPERIA
22+
原厂
32000
询价
Nexperia/安世
21+
SOT323
8080
只有原装,支持实单
询价
Nexperia
1848+
SOT323
30000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
NEXPERIA/安世
20+
SOT-323
120000
原装正品 可含税交易
询价
NEXPERIA/安世
2021+
SOT323
9000
原装现货,随时欢迎询价
询价
PANJIT/强茂
SOT323
7906200
询价
NEXPERIA
23+
SOT323
16048
原厂可订货,技术支持,直接渠道。可签保供合同
询价
NEXPERIA
23+
SOT323
20316
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
更多BC817-25W供应商 更新时间2024-5-4 17:24:00