| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
UHFvariablecapacitancediode DESCRIPTION TheBB149Aisaplanartechnologyvariablecapacitancediode,inaSOD323verysmallplasticSMDpackage.Theexcellentmatchingperformanceisachievedbyglidingmatchingandadirectmatchingassemblyprocedure. FEATURES •Excellentlinearity •Excellentmatchingto2DMA •Ver | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
TRANZYSTORYNPN LowLevelandGeneralPurposeAmplifiers | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
LowLevelandGeneralPurposeAmplifiers | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
NPNSiliconDigitalTransistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=47kΩ) | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
NPNSiliconDigitalTransistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=47kΩ) | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
NPNSiliconDigitalTransistor NPNSiliconDigitalTransistor •Switchingcircuit,inverter,interfacecircuit,drivercircuit •Builtinbiasresistor(R1=47kΩ) | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
PNP5GHzwidebandtransistor DESCRIPTION PNPtransistorinaSOT89envelope.ItisintendedforuseinUHFapplicationssuchasbroadbandaerialamplifiers(30to860MHz)andinmicrowaveamplifierssuchasradarsystems,spectrumanalyzers,etc.,usingSMDtechnology. | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
PNP5GHzwidebandtransistor DESCRIPTION PNPtransistorinaSOT89envelope.ItisintendedforuseinUHFapplicationssuchasbroadbandaerialamplifiers(30to860MHz)andinmicrowaveamplifierssuchasradarsystems,spectrumanalysers,etc.,usingSMDtechnology. | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
BLC149 | BellingSHANGHAI BELLING CO., LTD. 上海贝岭上海贝岭股份有限公司 | Belling | ||
SIPMOSSmall-SignalTransistor(NchannelDepletionmodeHighdynamicresistance) ●VDS200V ●ID0.48A ●RDS(on)3.5Ω ●Nchannel ●Depletionmode ●Highdynamicresistance ●AvailablegroupedinVGS(th) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | SIEMENS | ||
SIPMOSSmall-Signal-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
SIPMOSSmall-Signal-Transistor Features •N-channel •Depletionmode •dv/dtrated •AvailablewithVGS(th)indicatoronreel •Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
N-ChannelEnhancementModePowerMOSFET GENERALFEATURES Vos=200V Ib=10A@Ves=10V Rosion)£1.35Q@Ves=10V SOT-223package. | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟電子台舟電子股份有限公司 | TECHPUBLIC | ||
SIPMOSSmall-SignalTransistor(NchannelDepletionmodeHighdynamicresistance) SIPMOS®Small-SignalTransistor ●VDS200V ●ID0.35A ●RDS(on)3.5Ω ●Nchannel ●Depletionmode ●Highdynamicresistance ●AvailablegroupedinVGS(th) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | SIEMENS | ||
Thyristorslogiclevel GENERALDESCRIPTION Glasspassivated,sensitivegatethyristorsinaplasticenvelope,intendedforuseingeneralpurposeswitchingandphasecontrolapplications.Thesedevicesareintendedtobeinterfaceddirectlytomicrocontrollers,logicintegratedcircuitsandotherlowpowergatetrigger | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
Thyristorslogiclevel GENERALDESCRIPTION Glasspassivated,sensitivegatethyristorsinaplasticenvelope,intendedforuseingeneralpurposeswitchingandphasecontrolapplications.Thesedevicesareintendedtobeinterfaceddirectlytomicrocontrollers,logicintegratedcircuitsandotherlowpowergatetrigger | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
Thyristorslogiclevel GENERALDESCRIPTION Glasspassivated,sensitivegatethyristorsinaplasticenvelope,intendedforuseingeneralpurposeswitchingandphasecontrolapplications.Thesedevicesareintendedtobeinterfaceddirectlytomicrocontrollers,logicintegratedcircuitsandotherlowpowergatetrigger | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
SCR | WEENWeEn Semiconductors 瑞能半导体瑞能半导体科技股份有限公司 | WEEN |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NXP/恩智浦 |
2306+ |
SMT0805 |
7644 |
优势代理渠道,原装现货,可全系列订货 |
询价 | ||
PHILIPS |
08+pbFree |
SOD323 |
200000 |
询价 | |||
NXP |
13+ |
10868 |
原装分销 |
询价 | |||
NXP原装 |
22+23+ |
SMT0805 |
30942 |
绝对原装正品全新进口深圳现货 |
询价 | ||
NXP/恩智浦 |
1701+ |
SMT0805 |
14930 |
只做原装现货、主营光电元器件/门市现货 |
询价 | ||
NXP/恩智浦 |
22+ |
SMT0805 |
90000 |
原装现货 假一赔十 |
询价 | ||
NXP/恩智浦 |
24+ |
SMT0805 |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
NXP |
22+ |
NA |
45000 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
PhilipsSemiconducto |
22+ |
NA |
30000 |
100%全新原装 假一赔十 |
询价 | ||
NXP |
2022+ |
原厂原包装 |
8600 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 |
