Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; CMPAK-4(SOT-

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Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.

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HitachiHitachi Semiconductor

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Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4(SOT-1

文件：274.21 Kbytes 页数：8 Pages

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瑞萨

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4(SOT-1

文件：274.21 Kbytes 页数：8 Pages

RENESAS

瑞萨