SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features • Low Turn-on Voltage • Fast Switching • PN Junction Guard Ring for Transient and ESD Protection • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 3) • Green Device (Note 4 and 5)

文件：53.18 Kbytes 页数：1 Pages

DIODES

美台半导体

Surface Mount Schottky Barrier Diodes

SMALL SIGNAL SCHOTTKY DIODES 70m AMPERES 70 VOLTS Description: These schottky barrier diodes are designed for high speed switching applications circuit protection, and voltage clamping, Extremely low forward voltage reduces conduction loss, Miniature surface mount package is excellent for

文件：502.06 Kbytes 页数：3 Pages

WEITRON

Surface Mount Schottky Barrier Diode

FEATURES ● Low Forward voltage drop. ● High breakdown voltage. ● Guard ring protected. ● Low capacitance. ● Very small SMD package. APPLICATIONS ● For high speed switching applications.

文件：141.43 Kbytes 页数：3 Pages

BILIN

银河微电

SCHOKKTY DIODE

FEATURES • Low Turn-on voltage • Fast switching • Also available in lead free version

文件：236.55 Kbytes 页数：2 Pages

HTSEMI

金誉半导体

SCHOKKTY BARRIER DIODE

SCHOKKTY BARRIER DIODE FEATURES ● Low turn-on voltage ● Fast switching ● Also available in lead free version

文件：1.08613 Mbytes 页数：4 Pages

JIANGSU

长电科技

Schottky Diode

Features ◇ Low Turn-on voltage ◇ Fast switching ◇ Also available in lead free version

文件：232.22 Kbytes 页数：2 Pages

LUGUANG

鲁光电子

Surface Mount Schottky Barrier Diode

FEATURES ● Low Forward voltage drop. ● High breakdown voltage. ● Guard ring protected. ● Low capacitance. ● Very small SMD package. APPLICATIONS ● For high speed switching applications.

文件：223.74 Kbytes 页数：3 Pages

DSK

Plastic-Encapsulate Schottky Barrier Diodes

FEATURES ● Low Turn-on voltage ● Fast Switching ● Also available in lead free version ● Moisture Sensitivity Level 1

文件：716.77 Kbytes 页数：6 Pages

WILLASWILLAS ELECTRONIC CORP

威伦威伦电子股份有限公司

Schottky barrier diode

Features ® General rectification ® Low Vg Low Ir ® High reliability

文件：4.65283 Mbytes 页数：3 Pages

TECHPUBLIC

台舟电子

SCHOTTKY DIODE

FEATURES Power dissipation PD: 200 mW (Tamb=25℃) Collector current IF: 70 mA Collector-base voltage VR: 70 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：65.63 Kbytes 页数：1 Pages

TEL

东电电子