High-speed double diode

DESCRIPTION The BAS56 consists of two highspeed switching diodes fabricated in planar technology, and encapsulated in the small rectangular plastic SMD SOT143 package. The diodes are not connected. FEATURES • Small plastic SMD package • High switching speed: max. 6 ns • Continuous reverse vol

文件：38 Kbytes 页数：8 Pages

PHI

飞利浦

DUAL HIGH CURRENT SWITCHING DIODE

DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package with isolated dual diodes, designed for high current, high speed switching applications. Marking code is L51.

文件：93.35 Kbytes 页数：2 Pages

Central

High-speed double diode

General description Two high-speed switching diodes fabricated in planar technology, and encapsulated in a small SOT143B Surface-Mounted Device (SMD) plastic package. The diodes are not connected. Features and benefits ■ High switching speed: trr ≤ 6 ns ■ Reverse voltage: VR ≤ 60 V ■ Repetiti

文件：136.21 Kbytes 页数：10 Pages

恩XP

High-Speed Double Diode

Features ● Small plastic SMD package ● High switching speed: max. 6 ns ● Continuous reverse voltage:max. 60 V ● Repetitive peak reverse voltage:max. 60 V ● Repetitive peak forward current:max. 600 mA.

文件：40.76 Kbytes 页数：2 Pages

KEXIN

科信电子

High-speed Double Diode

High-speed Double Diode Features High switching speed. Continuous reverse voltage. Repetitive peak reverse voltage. Pepetitive peak forward current. Applications High speed switching in e.g.surface mounted circuits.

文件：281.58 Kbytes 页数：4 Pages

LUGUANG

鲁光电子

丝印：L5；Package：SOT143B；High-speed double diode

1.1 General description Two high-speed switching diodes fabricated in planar technology, and encapsulated in a small SOT143B Surface-Mounted Device (SMD) plastic package. The diodes are not connected. 1.2 Features and benefits High switching speed: trr ≤ 6 ns Reverse voltage: VR ≤ 60 V R

文件：862.73 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

SURFACE MOUNT DUAL, ISOLATED HIGH CURRENT SILICON SWITCHING DIODES

文件：427.66 Kbytes 页数：2 Pages

Central

HIGH CURRENT SILICON SWITCHING DIODES

文件：427.66 Kbytes 页数：2 Pages

Central

High-speed double diode

文件：280.43 Kbytes 页数：12 Pages

PHI

飞利浦

High-speed double diode

The BAS56 consists of two high-speed switching diodes fabricated in planar technology, and encapsulated in the small rectangular plastic SMD SOT143 package. The diodes are not connected. • Small plastic SMD package\n• High switching speed: max. 6 ns\n• Continuous reverse voltage: max. 60 V\n• Repetitive peak reverse voltage: max. 60 V\n• Repetitive peak forward current: max. 600 mA.\n• AEC-Q101 qualified;

Nexperia

安世