BAS299

HIGH SPEED HIGH CURRENT QUAD SWITCHING DIODE

Features •High-SwitchingSpeed,HighCurrent •SurfaceMountPackageIdeallySuitedforAutomatedInsertion •ForGeneralPurposeSwitchingApplications •HighConductance •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Qualif

BAS299-7

Marking：BA9；Package：SOT23；HIGH SPEED HIGH CURRENT QUAD SWITCHING DIODE

Features •High-SwitchingSpeed,HighCurrent •SurfaceMountPackageIdeallySuitedforAutomatedInsertion •ForGeneralPurposeSwitchingApplications •HighConductance •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Qualif

BAS299N3

High ?뱒peed double diode

Features •SmallplasticSMDpackage •Highswitchingspeed:max.4ns •Continuousreversevoltage:max.100V •Repetitivepeakreversevoltage:max.110V •Repetitivepeakforwardcurrent:max.900mA. •Pb-freepackage

BAS299N3-0-T1-G

High ?뱒peed double diode

Features •SmallplasticSMDpackage •Highswitchingspeed:max.4ns •Continuousreversevoltage:max.100V •Repetitivepeakreversevoltage:max.110V •Repetitivepeakforwardcurrent:max.900mA. •Pb-freepackage

BAS299-7

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：FAST SWITCHING DIODE SOT23

BF299

NPNHIGHVOLTAGEVIDEOAMPLIFIERS

BSH299

P-channelenhancementmodeMOStransistor

DESCRIPTION P-channelenhancementmodeMOStransistorinaSOT363SMDpackage. FEATURES •Lowthresholdvoltage •High-speedswitching •Nosecondarybreakdown •DirectinterfacetoC-MOS,TTL,etc. APPLICATIONS •Powermanagement •Batterypoweredapplicationse.g.cellularphones •Gen

BSP299

SIPMOSSmall-SignalTransistor(NchannelEnhancementmodeAvalancherated)

SIPMOS®Small-SignalTransistor •Nchannel •Enhancementmode •Avalancherated •VGS(th)=2.1...4.0V

BSP299

SIPMOSSmall-SignalTransistor

SIPMOS®Small-SignalTransistor •Nchannel •Enhancementmode •Avalancherated •VGS(th)=2.1...4.0V •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoAECQ101 •Halogen­freeaccordingtoIEC61249­2­21

BSP299

SIPMOSSmall-SignalTransistor