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BAS116-AU_TU_10001

SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES

VOLTAGE 100 Volts POWER 250mWatts FEATURES • Suface mount package ideally suited for automatic insertion. • Very low leakage current. 2pA typical at VR=75V. • Low capacitance. 2pF max at VR=0V, f=1MHz • Acqire quality system certificate : TS16949 • AEC-Q101 qualified • Lead free in comply w

文件:335.38 Kbytes 页数:5 Pages

PANJIT

強茂

BAS116-AU_TX_00001

SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES

VOLTAGE 100 Volts POWER 250mWatts FEATURES • Suface mount package ideally suited for automatic insertion. • Very low leakage current. 2pA typical at VR=75V. • Low capacitance. 2pF max at VR=0V, f=1MHz • Acqire quality system certificate : TS16949 • AEC-Q101 qualified • Lead free in comply w

文件:335.38 Kbytes 页数:5 Pages

PANJIT

強茂

BAS116-AU_TX_10001

SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES

VOLTAGE 100 Volts POWER 250mWatts FEATURES • Suface mount package ideally suited for automatic insertion. • Very low leakage current. 2pA typical at VR=75V. • Low capacitance. 2pF max at VR=0V, f=1MHz • Acqire quality system certificate : TS16949 • AEC-Q101 qualified • Lead free in comply w

文件:335.38 Kbytes 页数:5 Pages

PANJIT

強茂

BAS116-AU_TY_00001

SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES

VOLTAGE 100 Volts POWER 250mWatts FEATURES • Suface mount package ideally suited for automatic insertion. • Very low leakage current. 2pA typical at VR=75V. • Low capacitance. 2pF max at VR=0V, f=1MHz • Acqire quality system certificate : TS16949 • AEC-Q101 qualified • Lead free in comply w

文件:335.38 Kbytes 页数:5 Pages

PANJIT

強茂

BAS116-AU_TY_10001

SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES

VOLTAGE 100 Volts POWER 250mWatts FEATURES • Suface mount package ideally suited for automatic insertion. • Very low leakage current. 2pA typical at VR=75V. • Low capacitance. 2pF max at VR=0V, f=1MHz • Acqire quality system certificate : TS16949 • AEC-Q101 qualified • Lead free in comply w

文件:335.38 Kbytes 页数:5 Pages

PANJIT

強茂

BAS116DY

丝印:2H;Package:TSSOP6;Low-leakage dual switching diode

1. General description Epitaxial, medium-speed switching, electrically isolated dual diode in an ultra small SOT363 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low leakage current: maximum 5 nA • Switching time: typical 0.8 μs • Continuous reverse voltage: maxi

文件:207.32 Kbytes 页数:9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BAS116DY-Q

丝印:2H;Package:TSSOP6;Low-leakage dual switching diode

1. General description Epitaxial, medium-speed switching, electrically isolated dual diode in an ultra small SOT363 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low leakage current: maximum 5 nA • Switching time: typical 0.8 μs • Continuous reverse voltage: maxi

文件:207.19 Kbytes 页数:9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BAS116GW-Q

丝印:GB;Package:SOD123;Low leakage switching diode

1. General description Low leakage switching diode, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr = 0.8 μs • Low leakage current: IR = 3 pA • Repetitive peak reverse voltage VRRM ≤ 85 V • Low capacitance:

文件:223.1 Kbytes 页数:10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BAS116H

丝印:B1;Package:SOD123F;Low leakage switching diode

1.1 General description Low leakage switching diode, encapsulated in a SOD123F small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits  Small and flat lead SMD plastic package  Low leakage current  Excellent coplanarity and improved thermal behavior

文件:804.6 Kbytes 页数:10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BAS116H

75 V, low leakage diode in small SOD123F package

General description Low leakage switching diode, encapsulated in a SOD123F small SMD plastic package. Features ■ Small and flat lead SMD plastic package ■ Low leakage current Applications ■ General-purpose switching

文件:51.47 Kbytes 页数:9 Pages

PHI

飞利浦

PHI

技术参数

  • Peak Reverse Repetitive Voltage:

    400V

  • Peak Reverse Recovery Time:

    1000ns

  • Peak Reverse Current:

    0.25uA

  • Peak Non-Repetitive Surge Current:

    4A

  • Peak Forward Voltage:

    1.1@0.3AV

  • Operating Junction Temperature:

    -65 to 150°C

  • Minimum Operating Temperature:

    -65°C

  • Maximum Power Dissipation:

    75000mW

  • Maximum Operating Temperature:

    150°C

  • Maximum Continuous Forward Current:

    0.35A

  • Configuration:

    Single

供应商型号品牌批号封装库存备注价格
PH
23+
DO-35
5000
全新原装深圳现货库存,特价·
询价
PHI
25+
DIP
2987
只售原装自家现货!诚信经营!欢迎来电!
询价
DIP
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
ON
24+/25+
2423
原装正品现货库存价优
询价
ON
SOT23-3
1800
正品原装--自家现货-实单可谈
询价
DISCRETE
3000
PH3
852000
询价
恩XP
2015+
SOT-23
28989
一级代理原装现货,特价热卖!
询价
PHI
24+
原厂封装
9000
原装现货假一罚十
询价
ON/ONSemiconductor/安森
24+
SOT-23
9028
新进库存/原装
询价
恩XP
25+
SOT23-2
445
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
更多BAS11供应商 更新时间2025-8-28 16:26:00