BA-0410

包装：散装 类别：连接器，互连器件 同轴连接器（RF）组件 描述：CONN F PLUG STR 75 OHM PUSH

BMXAMI0410

isolatedanaloginputmoduleX80-4inputs-highspeed

BMXAMO0410

isolatedanalogoutputmoduleX80-4outputs

BT0410-XXXT

4-QuardrantTriacs

DESCRIPTION TheBT04seriesissuitableforuseonACinductiveloads.Thesedevicesintendedtobeinterfacedirectlytomicro-controllers,logicintegratedcircuitsandotherlowpowergatetriggercircuits….

BT0410-XXXTF

4-QuardrantTriacs

DESCRIPTION TheBT04seriesissuitableforuseonACinductiveloads.Thesedevicesintendedtobeinterfacedirectlytomicro-controllers,logicintegratedcircuitsandotherlowpowergatetriggercircuits….

CEM0410

SingleN-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,3.4A,RDS(ON)=120mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CEM0410

N-ChannelMOSFETusesadvancedtrenchtechnology

CEM0410

SingleN-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,3.4A,RDS(ON)=120mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CEM0410SL

SingleN-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,3.2A,RDS(ON)=120mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. RDS(ON)=165mW@VGS=3V. RDS(ON)=130mW@VGS=5V.

CEZC0410SL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,10A,RDS(ON)=120mW@VGS=10V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. RDS(ON)=130mW@VGS=5V. RDS(ON)=165mW@VGS=3V.