B5819W

丝印：SL；Package：SOD-123；Plastic-Encapsulate Diodes

SCHOTTKYDIODES Features: Lowforwardvoltage; Applications: Low-voltage,high-frequencyandotherprotectioncircuits.

B5819W

丝印：SL；Package：SOD-123；SCHOTTKY BARRIER RECTIFIERS

ReverseVoltage-20to40V ForwardCurrent-1A FEATURES ♦Metalsiliconjunction,majoritycarrierconduction ♦Guardingforovervoltageprotection ♦Lowpowerloss,highefficiency ♦Highcurrentcapability ♦lowforwardvoltagedrop ♦Highsurgecapability ♦Foruseinlowvoltage,

B5819W

丝印：SL；Package：SOD-123；SOD-123 Plastic-Encapsulat e Schottky Barrier Diode

Features HighCurrentCapability LowForwardVoltageDrop P/NsuffixVmeansAEC-Q101qualified,e.g:B5817WV P/NsuffixVmeansHalogen-free

B5819W

SCHOTTKY DIODES SCHOTTKY BARRIER DIODE

DESCRIPTION The B5817W~B5819WareavailableinSOD123 package FEATURES Foruseinlowvoltage,highfrequencyinverters Freewheeling,andpolarityprotection applications AvailableinSOD123package MECHANICALDATA Case: Moldedplasticbody Terminals: Platedleadsso

B5819W

SCHOTTK Y BARRIER DIODE

Features Foruseinlowvoltage,highfrequencyinverters Freewheeling,andpolantyprotectionapplications

B5819W

SCHOTTKY DIODE

FEATURES ♦Foruseinlowvoltage,highfrequencyinverters ♦Freewheeling,andpolantyprotectionapplications MECHANICALDATA Case:Moldedplasticbody Terminals:PlatedleadssolderableperMIL-STD-750,Method2026 Polarity:Polaritysymbolsmarkedoncase Marking:B5817W:SJ

B5819W

SOD 123 Plastic-Encapsulate Diodes

Features ●VR40V ●IFAV1A Applications ●LowVoltageRectification ●LowPowerConsumptionApplications ●HighEfficiencyDC/DCConversion Marking ●SL

B5819W

丝印：SL；Package：SOD-123；Low stored change,majority carrier conduction.

FEATURES： ◆ExtremelylowVF. ◆Lowstoredchange,majoritycarrierconduction. ◆Lowpowerloss/highefficient ◆ForUseInLowVoltage,HighFrequencyInverters. ◆FreeWheeling,AndPolarityProtectionApplications.

B5819W

Surface Mount Schottky Rectifier

B5819W

SCHOTTKY BARRIER DIODE