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B160WG-SL

1A Surface Mount Schottky Barrier Rectifiers

CITCChip Integration Technology Corporation

竹懋科技竹懋科技股份有限公司

B160W-S

1ASurfaceMountSchottkyBarrierRectifiers

CITCChip Integration Technology Corporation

竹懋科技竹懋科技股份有限公司

B160W-ST

1ASurfaceMountSchottkyBarrierRectifiers

CITCChip Integration Technology Corporation

竹懋科技竹懋科技股份有限公司

BAT160

Schottkybarrierdoublediodes

DESCRIPTION PlanarSchottkybarrierdoublediodesencapsulatedinaSOT223plasticSMDpackage. FEATURES •Lowswitchinglosses •Capabilityofabsorbingveryhighsurgecurrent •Fastrecoverytime •Guardringprotected •PlasticSMDpackage. APPLICATIONS •Lowpowerswitched-modepower

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

BAT160

Schottkybarrierdoublediodes

DESCRIPTION PlanarSchottkybarrierdoublediodesencapsulatedinaSOT223plasticSMDpackage. FEATURES •Lowswitchinglosses •Capabilityofabsorbingveryhighsurgecurrent •Fastrecoverytime •Guardringprotected •PlasticSMDpackage. APPLICATIONS •Lowpowerswitched-modepower

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BAT160

Schottkybarrierdoublediodes

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

BAT160A

Schottkybarrierdoublediodes

DESCRIPTION PlanarSchottkybarrierdoublediodesencapsulatedinaSOT223plasticSMDpackage. FEATURES •Lowswitchinglosses •Capabilityofabsorbingveryhighsurgecurrent •Fastrecoverytime •Guardringprotected •PlasticSMDpackage. APPLICATIONS •Lowpowerswitched-modepower

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

BAT160A

Schottkybarrierdoublediodes

DESCRIPTION PlanarSchottkybarrierdoublediodesencapsulatedinaSOT223plasticSMDpackage. FEATURES •Lowswitchinglosses •Capabilityofabsorbingveryhighsurgecurrent •Fastrecoverytime •Guardringprotected •PlasticSMDpackage. APPLICATIONS •Lowpowerswitched-modepower

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BAT160A

Schottkybarrierdoublediodes

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

BAT160A

Schottkybarrierdoublediode

1.Generaldescription PlanarSchottkybarrierdoublediodeencapsulatedinaSOT223(SC73)Surface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Lowswitchinglosses •Capabilityofabsorbingveryhighsurgecurrent •Fastrecoverytime •Guardringprotected •Plasti

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BAT160C

Schottkybarrierdoublediodes

DESCRIPTION PlanarSchottkybarrierdoublediodesencapsulatedinaSOT223plasticSMDpackage. FEATURES •Lowswitchinglosses •Capabilityofabsorbingveryhighsurgecurrent •Fastrecoverytime •Guardringprotected •PlasticSMDpackage. APPLICATIONS •Lowpowerswitched-modepower

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BAT160C

Schottkybarrierdoublediodes

DESCRIPTION PlanarSchottkybarrierdoublediodesencapsulatedinaSOT223plasticSMDpackage. FEATURES •Lowswitchinglosses •Capabilityofabsorbingveryhighsurgecurrent •Fastrecoverytime •Guardringprotected •PlasticSMDpackage. APPLICATIONS •Lowpowerswitched-modepower

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

BAT160C

Schottkybarrierdoublediodes

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

BAT160C

Schottkybarrierdoublediode

1.Generaldescription PlanarSchottkybarrierdoublediodeencapsulatedinaSOT223(SC73)Surface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Lowswitchinglosses •Capabilityofabsorbingveryhighsurgecurrent •Fastrecoverytime •Guardringprotected •Plasti

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BAT160S

Schottkybarrierdoublediodes

DESCRIPTION PlanarSchottkybarrierdoublediodesencapsulatedinaSOT223plasticSMDpackage. FEATURES •Lowswitchinglosses •Capabilityofabsorbingveryhighsurgecurrent •Fastrecoverytime •Guardringprotected •PlasticSMDpackage. APPLICATIONS •Lowpowerswitched-modepower

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

BAT160S

Schottkybarrierdoublediodes

DESCRIPTION PlanarSchottkybarrierdoublediodesencapsulatedinaSOT223plasticSMDpackage. FEATURES •Lowswitchinglosses •Capabilityofabsorbingveryhighsurgecurrent •Fastrecoverytime •Guardringprotected •PlasticSMDpackage. APPLICATIONS •Lowpowerswitched-modepower

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BAT160S

Schottkybarrierdoublediodes

PhilipsNXP Semiconductors

飞利浦荷兰皇家飞利浦

BAT160S

Schottkybarrierdoublediode

1.Generaldescription PlanarSchottkybarrierdoublediodeencapsulatedinaSOT223(SC73)Surface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Lowswitchinglosses •Capabilityofabsorbingveryhighsurgecurrent •Fastrecoverytime •Guardringprotected •Plasti

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BAT160S-Q

Schottkybarrierdoublediode

1.Generaldescription PlanarSchottkybarrierdoublediodeencapsulatedinaSOT223(SC73)Surface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Lowswitchinglosses •Capabilityofabsorbingveryhighsurgecurrent •Fastrecoverytime •Guardringprotected •Plasti

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BB-160

BaseboardforTMCM-160

TRINAMIC

TRINAMIC Motion Control GmbH & Co. KG.

供应商型号品牌批号封装库存备注价格
CITC
16+
SOD-123SST
85000
鍏ㄦ柊鍘熻鐜拌揣/浠锋牸鍙皥!
询价
CITC
20+
SOD-123SST
36800
原装优势主营型号-可开原型号增税票
询价
CITC
2023+
SOD-123SST
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
CITC
2020+
SOD-123SST
18800
绝对原装进口现货,假一赔十,价格优势!
询价
CITC/竹懋
24+
SOD-123ST
125600
原装现货假一赔十
询价
CITC/竹懋
22+
SOD-123ST
354000
询价
CITC/竹懋
2019+PB
SOD-123ST
125600
全新-特价大量供货房间
询价
B160WG-ST
2019+PB
SOD-123ST
125600
13632880263
询价
CITC/竹懋
22+
125600
询价
CITC
SOD-123SST
85000
一级代理 原装正品假一罚十价格优势长期供货
询价
更多B160WG-S供应商 更新时间2024-9-21 15:14:00