AT49F1614T-70CI中文资料爱特梅尔数据手册PDF规格书

Description

The AT49F16X4(T) is a 5.0-volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 40 sectors for erase operations. The device is offered in 48-lead TSOP and 48-ball µBGA packages. The device has CE and OE control signals to avoid any bus contention. This device can be read or reprogrammed using a single 5.0V power supply, making it ideally suited for in-system programming.

The device powers on in the read mode. Command sequences are used to place the device in other operation modes such as program and erase. The device has the capability to protect the data in any sector. Once the data protection for a given sector is enabled, the data in that sector cannot be changed using input levels between ground and VCC.

Features

• 4.5V to 5.5V Read/Write

• Access Time – 90 ns

• Sector Erase Architecture

– Thirty 32K Word (64K byte) Sectors with Individual Write Lockout

– Eight 4K Word (8K byte) Sectors with Individual Write Lockout

– Two 16K Word (32K byte) Sectors with Individual Write Lockout

• Fast Word Program Time – 10 µs

• Fast Sector Erase Time – 200 ms

• Dual-plane Organization, Permitting Concurrent Read while Program/Erase

Memory Plane A: Eight 4K Word, Two 16K Word and Six 32K Word Sectors

Memory Plane B: Twenty-four 32K Word Sectors

• Erase Suspend Capability

– Supports Reading/Programming Data from Any Sector by Suspending Erase of

Any Different Sector

• Low-power Operation

– 60 mA Active

– 3 mA Standby

• DATA Polling, Toggle Bit, Ready/Busy for End of Program Detection

• RESET Input for Device Initialization

• Sector Program Unlock Command

• TSOP, CBGA and µBGA Package Options

• Top or Bottom Boot Block Configuration Available