AT49BV4096-20RI中文资料爱特梅尔数据手册PDF规格书

描述 Description

The AT49BV4096 and AT49LV4096 are 3-volt, 4-megabit Flash Memories organized as 256K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 67 mW at 2.7V read. When deselected, the CMOS standby current is less than 50 µA.

特性 Features

• Low Voltage Operation

- 2.7V Read

- 5V Program/Erase

• Fast Read Access Time - 120 ns

• Internal Erase/Program Control

• Sector Architecture

- One 8K Words (16K bytes) Boot Block with Programming Lockout

- Two 8K Words (16K bytes) Parameter Blocks

- One 232K Words (464K bytes) Main Memory Array Block

• Fast Sector Erase Time - 10 seconds

• Word-By-Word Programming - 10 µs/Word

• Hardware Data Protection

• DATA Polling For End Of Program Detection

• Low Power Dissipation

- 25 mA Active Current

- 50 µA CMOS Standby Current

• Typical 10,000 Write Cycles