AT49BV080T-12TI中文资料爱特梅尔数据手册PDF规格书

描述 Description

The AT49BV/LV080 are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over the commercial temperature range. When the device is deselected, the CMOS standby current is less than 50 µA.

特性 Features

• Single Supply for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)

• Fast Read Access Time - 120 ns

• Internal Program Control and Timer

• 16K bytes Boot Block With Lockout

• Fast Erase Cycle Time - 10 seconds

• Byte-By-Byte Programming - 30 µs/Byte Typical

• Hardware Data Protection

• DATA Polling For End Of Program Detection

• Low Power Dissipation

- 25 mA Active Current

- 50 µA CMOS Standby Current

• Typical 10,000 Write Cycles

• Small Packaging

- 8 x 14 mm CBGA