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29C040

4-Megabit512Kx85-voltOnly256-ByteSectorCMOSFlashMemory

Description TheAT29C040Aisa5-voltonlyin-systemFlashProgrammableandErasableReadOnlyMemory(PEROM).Its4megabitsofmemoryisorganizedas524,288wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOSEEPROMtechnology,thedeviceoffersaccesstimesupto90ns,anda

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

AT29C040

4-Megabit512Kx85-voltOnly256-ByteSectorCMOSFlashMemory

Description TheAT29C040Aisa5-voltonlyin-systemFlashProgrammableandErasableReadOnlyMemory(PEROM).Its4megabitsofmemoryisorganizedas524,288wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOSEEPROMtechnology,thedeviceoffersaccesstimesupto90ns,anda

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

AT29C040A

4-megabit(512Kx8)5-voltOnly256-byteSectorFlashMemory

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

AT29C040A

4-Megabit512Kx85-voltOnly256-ByteSectorCMOSFlashMemory

Description TheAT29C040Aisa5-voltonlyin-systemFlashProgrammableandErasableReadOnlyMemory(PEROM).Its4megabitsofmemoryisorganizedas524,288wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOSEEPROMtechnology,thedeviceoffersaccesstimesupto90ns,anda

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

W29C040

512KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C040isa4-megabit,5-voltonlyCMOSpagemodeFlashMemoryorganizedas512K´8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C040resultsin

WINBONDWinbond

华邦电子华邦电子股份有限公司

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