AT-112

Fixed Attenuators (SMA Type)

■Features 1.AbundantVariationsofAttenuators Attenuationamountsareavailableinabundantvariationsfrom0to4dBin0.5dBsteps,from4to10dBin1dBsteps,andin12,13,15,20,26and30dBsothatlevelscanbefinelyadjusted. 2.SMAType Thecouplingportionsareavaila

AT-1120

High Power Fixed Attenuators (Radiator built-in)

HighPowerFixedAttenuators(Radiatorbuilt-in) ■Features 1.SmallSizeandEconomical Berylliaisusedforthematerialoftheresistanceelementtoenabletheterminationtobeofsmallsizeandlowcost. 2.ConnectorsUsed Inthecouplingportion,theAT-1000SerieshasanSMAt

AT-1127-ST-2-R

ALL DIMENSIONS ARE IN MILLIMETERS

AT-1120(40)

Package：SMA 单排模块；包装：袋 类别：RF/IF，射频/中频和 RFID 衰减器 描述：RF ATTENUATOR 20DB 50OHM SMA

Hirose Electric Co Ltd

AT-11233

包装：散装 类别：开关 拨动开关 描述：SWITCH TOGGLE

Honeywell Sensing and Productivity Solutions

AT-1127-ST-2-R

包装：散装 类别：音频设备， 产品 警报器，蜂鸣器，警笛 描述：BUZZER MAGNETIC 3V 9MM TH

PUI Audio, Inc.

ATP112

P-ChannelSiliconMOSFETGeneral-PurposeSwitchingDeviceApplications

General-PurposeSwitchingDeviceApplications Features •ON-resistanceRDS(on)1=33mΩ(typ.) •4Vdrive •Protectiondiodein •InputCapacitanceCiss=1450pF(typ.) •Halogenfreecompliance

ATP112

P-ChannelPowerMOSFET

P-ChannelPowerMOSFET –60V,–25A,43mΩ,SingleATPAK Features •ON-resistanceRDS(on)1=33mΩ(typ.) •4Vdrive •Protectiondiodein •InputCapacitanceCiss=1450pF(typ.) •Halogenfreecompliance

ATP112-TL-H

General-PurposeSwitchingDeviceApplications

ATP112-TL-H

P-ChannelPowerMOSFET

P-ChannelPowerMOSFET –60V,–25A,43mΩ,SingleATPAK Features •ON-resistanceRDS(on)1=33mΩ(typ.) •4Vdrive •Protectiondiodein •InputCapacitanceCiss=1450pF(typ.) •Halogenfreecompliance