5V/3.3V 64Kx6 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

文件：239.37 Kbytes 页数：10 Pages

ALSC

5V / 3.3V 64KX16 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

文件：238.41 Kbytes 页数：10 Pages

ALSC

5V/3.3V 64Kx6 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

文件：239.37 Kbytes 页数：10 Pages

ALSC

5V/3.3V 64Kx6 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

文件：239.37 Kbytes 页数：10 Pages

ALSC

5V/3.3V 64Kx6 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

文件：239.37 Kbytes 页数：10 Pages

ALSC

5V/3.3V 64Kx6 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

文件：239.37 Kbytes 页数：10 Pages

ALSC

5V/3.3V 64Kx6 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

文件：239.37 Kbytes 页数：10 Pages

ALSC

5V / 3.3V 64KX16 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

文件：238.41 Kbytes 页数：10 Pages

ALSC

5V/3.3V 64Kx6 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

文件：239.37 Kbytes 页数：10 Pages

ALSC

5V / 3.3V 64KX16 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

文件：238.41 Kbytes 页数：10 Pages

ALSC