AS7C1026A中文资料ALSC数据手册PDF规格书

Functional description

The AS7C1026A and AS7C31026A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words × 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired.

Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 3/3/4/5 ns are ideal for high-performance applications.

Features

• AS7C1026A (5V version)

• AS7C31026A (3.3V version)

• Industrial and commercial versions

• Organization: 65,536 words × 16 bits

• Center power and ground pins for low noise

• High speed

- 10/12/15/20 ns address access time

- 3/3/4/5 ns output enable access time

• Low power consumption: ACTIVE

- 660 mW (AS7C1026A) / max @ 10 ns

- 324 mW (AS7C31026A) / max @ 10 ns

• Low power consumption: STANDBY

- 55 mW (AS7C1026A) / max CMOS I/O

- 36 mW (AS7C31026A) / max CMOS I/O

• Latest 6T 0.25u CMOS technology

• 2.0V data retention

• Easy memory expansion with CE, OE inputs

• TTL-compatible, three-state I/O

• JEDEC standard packaging

- 44-pin 400 mil SOJ

- 44-pin 400 mil TSOP II

- 48-ball 6 mm × 8 mm CSP mBGA

• ESD protection ≥ 2000 volts

• Latch-up current ≥ 200 mA