AS7C1024B-20TJIN集成电路（IC）的存储器规格书PDF中文资料

Functional description

The AS7C1024B is a high performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 words x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired.

Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5/6/7/8 ns are ideal for high performance applications. Active high and low chip enables (CE1, CE2) permit easy memory expansion with multiple-bank systems.

特性 Features

• Industrial and commercial temperatures

• Organization: 131,072 words x 8 bits

• High speed

- 10/12/15/20 ns address access time

- 5/6/7/8 ns output enable access time

• Low power consumption: ACTIVE

- 605 mW / max @ 10 ns

• Low power consumption: STANDBY

- 55 mW / max CMOS

• 6T 0.18u CMOS technology

• Easy memory expansion with CE1, CE2, OE inputs

• TTL/LVTTL-compatible, three-state I/O

• 32-pin JEDEC standard packages

- 300 mil SOJ

- 400 mil SOJ

- 8 × 20mm TSOP 1

- 8 x 13.4mm sTSOP 1

• ESD protection ≥ 2000 volts

• Latch-up current ≥ 200 mA