AS6VA25616-BC中文资料ALSC数据手册PDF规格书

Functional description

The AS6VA25616 is a low-power CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as 262,144 words × 16 bits. It is designed for memory applications where slow data access, low power, and simple interfacing are desired.

Features

• AS6VA25616

• Intelliwatt™ active power circuitry

• Industrial and commercial temperature ranges available

• Organization: 262,144 words × 16 bits

• 2.7V to 3.3V at 55 ns

• Low power consumption: ACTIVE

- 132 mW at 3.3V and 55 ns

• Low power consumption: STANDBY

- 66 µW max at 3.3V

• 1.2V data retention

• Equal access and cycle times

• Easy memory expansion with CS, OE inputs

• Smallest footprint packages

- 48-ball FBGA

- 400-mil 44-pin TSOP II

• ESD protection ≥ 2000 volts

• Latch-up current ≥ 200 mA