512K x 8 FLASH UNIFORM SECTOR 5.0V FLASH MEMORY

GENERAL DESCRIPTION The AS29F040 is a 4Mbit, 5.0 Volt-only FLASH memory organized as 524,288 Kbytes of 8 bits each. The 512 Kbytes of data are divided into eight sectors of 64 Kbytes each for flexible erase capability. The 8 bits of data appear on DQ0-DQ7. The device is designed to be programmed

文件：1.43679 Mbytes 页数：27 Pages

AUSTIN

5V 512K x 8 CMOS FLASH EEPROM

Functional description The AS29F040 is a 4-megabit, 5-volt-only Flash memory device organized as 512K bytes of 8 bits each. For flexible erase an program capability, the 4 megabits of data is divided into eight 64K-byte sectors. The ×8 data appears on DQ0–DQ7. The AS29F040 is offered in JEDEC sta

文件：341.03 Kbytes 页数：18 Pages

ALSC

Sector protection

GENERAL DESCRIPTION The AS29F040 is a 4Mbit, 5.0 Volt-only FLASH memory organized as 524,288 Kbytes of 8 bits each. The 512 Kbytes of data are divided into eight sectors of 64 Kbytes each for flexible erase capability. The 8 bits of data appear on DQ0-DQ7. The device is designed to be programmed

文件：598.47 Kbytes 页数：27 Pages

MICROSS

5V 512K x 8 CMOS FLASH EEPROM

AllianceMemory

联盟记忆

5V 512K x 8 CMOS FLASH EEPROM

Functional description The AS29F040 is a 4-megabit, 5-volt-only Flash memory device organized as 512K bytes of 8 bits each. For flexible erase an program capability, the 4 megabits of data is divided into eight 64K-byte sectors. The ×8 data appears on DQ0–DQ7. The AS29F040 is offered in JEDEC sta

文件：341.03 Kbytes 页数：18 Pages

ALSC

5V 512K x 8 CMOS FLASH EEPROM

Functional description The AS29F040 is a 4-megabit, 5-volt-only Flash memory device organized as 512K bytes of 8 bits each. For flexible erase an program capability, the 4 megabits of data is divided into eight 64K-byte sectors. The ×8 data appears on DQ0–DQ7. The AS29F040 is offered in JEDEC sta

文件：341.03 Kbytes 页数：18 Pages

ALSC

5V 512K x 8 CMOS FLASH EEPROM

Functional description The AS29F040 is a 4-megabit, 5-volt-only Flash memory device organized as 512K bytes of 8 bits each. For flexible erase an program capability, the 4 megabits of data is divided into eight 64K-byte sectors. The ×8 data appears on DQ0–DQ7. The AS29F040 is offered in JEDEC sta

文件：341.03 Kbytes 页数：18 Pages

ALSC

5V 512K x 8 CMOS FLASH EEPROM

Functional description The AS29F040 is a 4-megabit, 5-volt-only Flash memory device organized as 512K bytes of 8 bits each. For flexible erase an program capability, the 4 megabits of data is divided into eight 64K-byte sectors. The ×8 data appears on DQ0–DQ7. The AS29F040 is offered in JEDEC sta

文件：341.03 Kbytes 页数：18 Pages

ALSC

5V 512K x 8 CMOS FLASH EEPROM

Functional description The AS29F040 is a 4-megabit, 5-volt-only Flash memory device organized as 512K bytes of 8 bits each. For flexible erase an program capability, the 4 megabits of data is divided into eight 64K-byte sectors. The ×8 data appears on DQ0–DQ7. The AS29F040 is offered in JEDEC sta

文件：341.03 Kbytes 页数：18 Pages

ALSC

5V 512K x 8 CMOS FLASH EEPROM

Functional description The AS29F040 is a 4-megabit, 5-volt-only Flash memory device organized as 512K bytes of 8 bits each. For flexible erase an program capability, the 4 megabits of data is divided into eight 64K-byte sectors. The ×8 data appears on DQ0–DQ7. The AS29F040 is offered in JEDEC sta

文件：341.03 Kbytes 页数：18 Pages

ALSC