HYBRID - HIGH RELIABILITY RADIATION HARDENED DC-DC CONVERTER

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HYBRID - HIGH RELIABILITY RADIATION HARDENED DC/DC CONVERTER

文件：140.01 Kbytes 页数：12 Pages

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Power LDMOS transistor

General description Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz. Features and benefits  High

文件：1.69425 Mbytes 页数：18 Pages

Ampleon

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Power LDMOS transistor

General description Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz. Features and benefits  High

文件：1.69425 Mbytes 页数：18 Pages

Ampleon

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Power LDMOS transistor

General description Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz. Features and benefits  High

文件：1.69425 Mbytes 页数：18 Pages

Ampleon

安谱隆

Power LDMOS transistor

General description Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz. Features and benefits  High

文件：1.69425 Mbytes 页数：18 Pages

Ampleon

安谱隆

Power LDMOS transistor

Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz. • High breakdown voltage enables class E operation up to VDS = 53 V\n• Qualified up to a maximum of VDS = 65 V\n• Characterized from 30 V to 65 V to support a wide range of applications\n• Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor\n• Exc;

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Power LDMOS transistor

Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz. • High breakdown voltage enables class E operation up to VDS = 53 V\n• Qualified up to a maximum of VDS = 65 V\n• Characterized from 30 V to 65 V to support a wide range of applications\n• Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor\n• Exc;

Ampleon

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Power LDMOS transistor

Based on Advanced Rugged Technology (ART) a 2000 W LDMOS power transistor for ISM application has been designed. This unmatched device covers a frequency range of 1 MHz to 450 MHz. • High breakdown voltage enables class E operation up to VDS = 50 V\n• Qualified up to a maximum of VDS = 65 V\n• Characterized from 30 V to 65 V for extended power range\n• Easy power control\n• Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor;

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Package：SOT-539AN；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：ART2K0FEG/SOT1248/REELDP

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