APT5023DN

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=26A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.23Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmode

CG-BGA-5023

Hingedclamshellsocketlid

CMT-5023S-SMT

MAGNETICBUZZERTRANSDUCER

CMT-5023S-SMT-TR

MAGNETICBUZZERTRANSDUCER

CMT-5023S-SMT-TR

MAGNETICBUZZERTRANSDUCER

FEATURES •5x5x2mm •SMT •ratedfrequencyof4000Hz

D5023

CASE-RATEDBIPOLARTRANSISTORFORTYPE3DD5023FORLOWFREQUENCY

3DD5023,Marking:D5023. D5023Datasheet(2SD5023->CorrectPartnumber3DD5023). 3DD5023ishighbreakdownvoltageofNPNbipolartransistor.Themainprocessofmanufacture:highvoltagemesatypeprocess,triplediffusedprocessetc.,adoptionoffullyplasticpackge.RoHSproduct.

DBL5023

FMRECIVER&COMPANDORSYSTEM

FMRECEIVER&COMPANDORSYSTEM

DKA5023

NTCDiodeThermometricsThermistors

NTCDiode ThermometricsThermistors ArangeofNTCchipthermistorsinDO-35styleglasspackage(diodeoutline)withaxialsolder-coatedcopper-cladsteelwires. •Designedforaccuratetemperature measurement,controlandcompensation •TighttolerancesonresistanceandBvalue •Opera

DRV5023

Digital-SwitchHallEffectSensor

DRV5023

DRV5023Digital-SwitchHallEffectSensor

1Features •DigitalUnipolar-SwitchHallSensor •SuperiorTemperatureStability –Sensitivity±10%OverTemperature •MultipleSensitivityOptions(BOP/BRP): –3.5/2mT(FA,seeFigure24) –6.9/3.2mT(AJ,seeFigure24) –14.5/6mT(BI,seeFigure24) •SupportsaWideVolt