| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. PowerMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Iden | ADPOW Advanced Power Technology | ADPOW | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. PowerMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Iden | ADPOW Advanced Power Technology | ADPOW | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=18A@TC=25℃ ·DrainSourceVoltage- :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.67Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWERMOS7™ PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7TMbysignificantlyloweringRDS(ON)andQg.PowerMOS7TMcombineslowerconductionandswitchinglossesalongwit | ADPOW Advanced Power Technology | ADPOW | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=18A@TC=25℃ ·DrainSourceVoltage- :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.67Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
POWER MOS V | ADPOW Advanced Power Technology | ADPOW | ||
POWER MOS V | ADPOW Advanced Power Technology | ADPOW | ||
POWER MOS 7 FREDFET | ADPOW Advanced Power Technology | ADPOW | ||
POWER MOS 7 FREDFET | ADPOW Advanced Power Technology | ADPOW | ||
1200V 18A 0.670W | ADPOW Advanced Power Technology | ADPOW | ||
POWER MOS 7 FREDFET | ADPOW Advanced Power Technology | ADPOW |
详细参数
- 型号：
APT1206
- 制造商：
ADPOW
- 制造商全称：
Advanced Power Technology
- 功能描述：
POWER MOS V
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
APT |
08+(pbfree) |
8866 |
询价 | ||||
APT |
22+ |
原厂原封 |
8200 |
原装现货库存.价格优势!! |
询价 | ||
APT |
18+ |
TO-247 |
2050 |
公司大量全新原装 正品 随时可以发货 |
询价 | ||
ADPOW |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
询价 | ||
APTMICROSEMI |
23+ |
T-MAXB2 |
27682 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
APT |
22+ |
T-MAX |
6000 |
十年配单,只做原装 |
询价 | ||
APT |
23+ |
T-MAX |
6000 |
原装正品，支持实单 |
询价 | ||
APT |
22+ |
T-MAX |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
APT |
23+ |
TO-247Max |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
APT |
24+ |
TO-247Max |
44 |
原装正品,假一罚十! |
询价 |
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- APT13003SU-G1
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- APT13F120B
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- APT13GP120K
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- APT14050JVFR
- APT14F100B_09
- APT14M100B
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- APT14M120B_09
- APT150
