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APT10M11B2VR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching

ADPOW

Advanced Power Technology

APT10M11B2VR

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=100A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=11mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

APT10M11JVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching

ADPOW

Advanced Power Technology

APT10M11JVRU2

ISOTOP Boost chopper MOSFET Power Module

Features •PowerMOSV®MOSFETs -LowRDSon -LowinputandMillercapacitance -Lowgatecharge -Fastintrinsicdiode -Avalancheenergyrated -Veryrugged •ISOTOP®Package(SOT-227) •Verylowstrayinductance •Highlevelofintegration Benefits •Outstand

ADPOW

Advanced Power Technology

APT10M11JVRU2

ISOTOP Boost chopper MOSFET Power Module

Features •PowerMOSV®MOSFETs -LowRDSon -LowinputandMillercapacitance -Lowgatecharge -Fastintrinsicdiode -Avalancheenergyrated -Veryrugged •ISOTOP®Package(SOT-227) •Verylowstrayinductance •Highlevelofintegration Benefits •Outstand

MicrosemiMicrosemi Corporation

美高森美美高森美公司

APT10M11JVRU3

ISOTOP Buck chopper MOSFET Power Module

Features •PowerMOSV®MOSFETs -LowRDSon -LowinputandMillercapacitance -Lowgatecharge -Fastintrinsicdiode -Avalancheenergyrated -Veryrugged •ISOTOP®Package(SOT-227) •Verylowstrayinductance •Highlevelofintegrati Benefits •Outstandin

ADPOW

Advanced Power Technology

APT10M11JVRU3

ISOTOP Buck chopper MOSFET Power Module

Features •PowerMOSV®MOSFETs -LowRDSon -LowinputandMillercapacitance -Lowgatecharge -Fastintrinsicdiode -Avalancheenergyrated -Veryrugged •ISOTOP®Package(SOT-227) •Verylowstrayinductance •Highlevelofintegration Benefits •Outstand

MicrosemiMicrosemi Corporation

美高森美美高森美公司

APT10M11LVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.. •FasterSwitch

ADPOW

Advanced Power Technology

APT10M11B2VFR

High Voltage N-Channel enhancement mode power MOSFET

ADPOW

Advanced Power Technology

APT10M11JVFR

High Voltage N-Channel enhancement mode power MOSFET

ADPOW

Advanced Power Technology

APT10M11LVFR

High Voltage N-Channel enhancement mode power MOSFET

ADPOW

Advanced Power Technology

详细参数

  • 型号:

    APT10M11

  • 制造商:

    ADPOW

  • 制造商全称:

    Advanced Power Technology

  • 功能描述:

    Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

供应商型号品牌批号封装库存备注价格
APT
08+(pbfree)
8866
询价
APT
18+
2173
公司大量全新正品 随时可以发货
询价
ADPOW
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
询价
APT
23+
TO-247Max
50000
全新原装正品现货,支持订货
询价
APT
22+
NULL
6000
十年配单,只做原装
询价
APT
23+
TO-247
6000
原装正品,支持实单
询价
APT
22+
NA
1120
中国航天工业部战略合作伙伴行业领导者
询价
APT
22+
TO-247
25000
只做原装进口现货,专注配单
询价
APT
23+
TO-247Max
18
原装正品,假一罚十!
询价
APT
24+25+/26+27+
TO-247-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
更多APT10M11供应商 更新时间2024-6-19 16:30:00