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APT10045JLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

ADPOW

Advanced Power Technology

ADPOW

APT10045JLL

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

ADPOW

Advanced Power Technology

ADPOW

APT10045JLL_03

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

ADPOW

Advanced Power Technology

ADPOW

APT10045JFLL

PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.

PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalongwithexceptionally

ADPOW

Advanced Power Technology

ADPOW

APT10045JFLL

PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.

ADPOW

Advanced Power Technology

ADPOW

APT10045LFLL

PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.

PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalongwithexceptionally

ADPOW

Advanced Power Technology

ADPOW

APT10045LFLL

PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.

ADPOW

Advanced Power Technology

ADPOW

APT10045LFLL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=23A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.45Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

APT10045LLL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=23A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.45Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

APT10045LLL

PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.

ADPOW

Advanced Power Technology

ADPOW

APT10045LLL

PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.

PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalongwithexceptionally

ADPOW

Advanced Power Technology

ADPOW

FST10045

SchottkyPowerMod

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

FST10045

100AmpRectifier20to100VoltsSchottkyBarrier

Features •Metalofsiliconrectifier,majontycarrierconducton •Guardringfortransientprotection •Lowpowerlosshighefficiency •Highsurgecapacity,Highcurrentcapability

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

FST10045

SchottkyPowerMod

SchottkyPowerMod ●SchottkyBarrierRectifier ●GuardRingforReverseProtection ●Lowforwardvoltage ●VRRM30to45Volts ●Electricallyisolatedbase ●ReverseEnergyTested ●Centertap ●ROHSCompliant

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

FST10045

SCHOTTKYDIODESMODULETYPE100A

100AmpRectifier20-100Volts Features •HighSurgeCapability •TypesUpto100VVRRM

TEL

TRANSYS Electronics Limited

TEL

FST10045

SiliconPowerSchottkyDiode

GENESIC

GeneSiC Semiconductor, Inc.

GENESIC

FST10045

SiliconPowerSchottkyDiode

Features •HighSurgeCapability •Typesfrom45Vto100VVRRM •IsolatedtoPlate •NotESDSensitive

GENESIC

GeneSiC Semiconductor, Inc.

GENESIC

FSTI10045

SCHOTTKYDIODESMODULETYPE100A

TEL

TRANSYS Electronics Limited

TEL

MJ10045

NPNSILICONPOWERDARLINGTONTRANSISTOR

25KVAENERGYMANAGEMENTSERIERSSWITCHMODEDARLINGTONTRANSISTORS25,50and100AmpereOperatingCurrent

MotorolaMotorola, Inc

摩托罗拉

Motorola

MJ10045

NPNSiliconPowerDarlingtonTransistor

25KVAENERGYMANAGEMENTSERIERSSWITCHMODEDARLINGTONTRANSISTORS25,50and100AmpereOperatingCurrent

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

详细参数

  • 型号:

    APT10045JLL

  • 功能描述:

    MOSFET N-CH 1000V 21A SOT-227

  • RoHS:

  • 类别:

    半导体模块 >> FET

  • 系列:

    POWER MOS 7®

  • 标准包装:

    10

  • 系列:

    *

供应商型号品牌批号封装库存备注价格
Microchip Technology
23+
ISOTOP?
30000
晶体管-分立半导体产品-原装正品
询价
APT
23+
模块
120
全新原装正品,量大可订货!可开17%增值票!价格优势!
询价
APT
23+
模块
3562
询价
MicrosemiPowerProductsGr
23+
MOSFETN-CH1000V21ASOT-22
1690
专业代理销售半导体模块,能提供更多数量
询价
APT
23+
模块
5000
原装正品,假一罚十
询价
APT
22+
模块
3500
原装现货,可开13%税票
询价
APT
22+
原厂原封
8200
原装现货库存.价格优势!!
询价
Microsemi
23+
N/A
5800
正常排单原厂正规渠道保证原装正品
询价
MicrosemiCorporation
2019+
SOT-227-4
65500
miniBLOC
询价
aptchip(爱普特微)
21+
模块
12588
原装正品,一级品牌代理
询价
更多APT10045JLL供应商 更新时间2024-4-28 11:20:00