首页 >APT10045JLL>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
APT10045JLL | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | ADPOW Advanced Power Technology | ||
APT10045JLL | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS | ADPOW Advanced Power Technology | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS | ADPOW Advanced Power Technology | |||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalongwithexceptionally | ADPOW Advanced Power Technology | |||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. | ADPOW Advanced Power Technology | |||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalongwithexceptionally | ADPOW Advanced Power Technology | |||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. | ADPOW Advanced Power Technology | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=23A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.45Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=23A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.45Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. | ADPOW Advanced Power Technology | |||
PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalongwithexceptionally | ADPOW Advanced Power Technology | |||
SchottkyPowerMod | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
100AmpRectifier20to100VoltsSchottkyBarrier Features •Metalofsiliconrectifier,majontycarrierconducton •Guardringfortransientprotection •Lowpowerlosshighefficiency •Highsurgecapacity,Highcurrentcapability | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
SchottkyPowerMod SchottkyPowerMod ●SchottkyBarrierRectifier ●GuardRingforReverseProtection ●Lowforwardvoltage ●VRRM30to45Volts ●Electricallyisolatedbase ●ReverseEnergyTested ●Centertap ●ROHSCompliant | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
SCHOTTKYDIODESMODULETYPE100A 100AmpRectifier20-100Volts Features •HighSurgeCapability •TypesUpto100VVRRM | TEL TRANSYS Electronics Limited | |||
SiliconPowerSchottkyDiode | GENESIC GeneSiC Semiconductor, Inc. | |||
SiliconPowerSchottkyDiode Features •HighSurgeCapability •Typesfrom45Vto100VVRRM •IsolatedtoPlate •NotESDSensitive | GENESIC GeneSiC Semiconductor, Inc. | |||
SCHOTTKYDIODESMODULETYPE100A | TEL TRANSYS Electronics Limited | |||
NPNSILICONPOWERDARLINGTONTRANSISTOR 25KVAENERGYMANAGEMENTSERIERSSWITCHMODEDARLINGTONTRANSISTORS25,50and100AmpereOperatingCurrent | MotorolaMotorola, Inc 摩托罗拉 | |||
NPNSiliconPowerDarlingtonTransistor 25KVAENERGYMANAGEMENTSERIERSSWITCHMODEDARLINGTONTRANSISTORS25,50and100AmpereOperatingCurrent | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |
详细参数
- 型号:
APT10045JLL
- 功能描述:
MOSFET N-CH 1000V 21A SOT-227
- RoHS:
是
- 类别:
半导体模块 >> FET
- 系列:
POWER MOS 7®
- 标准包装:
10
- 系列:
*
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Microchip Technology |
23+ |
ISOTOP? |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
APT |
23+ |
模块 |
120 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
询价 | ||
APT |
23+ |
模块 |
3562 |
询价 | |||
MicrosemiPowerProductsGr |
23+ |
MOSFETN-CH1000V21ASOT-22 |
1690 |
专业代理销售半导体模块,能提供更多数量 |
询价 | ||
APT |
23+ |
模块 |
5000 |
原装正品,假一罚十 |
询价 | ||
APT |
22+ |
模块 |
3500 |
原装现货,可开13%税票 |
询价 | ||
APT |
22+ |
原厂原封 |
8200 |
原装现货库存.价格优势!! |
询价 | ||
Microsemi |
23+ |
N/A |
5800 |
正常排单原厂正规渠道保证原装正品 |
询价 | ||
MicrosemiCorporation |
2019+ |
SOT-227-4 |
65500 |
miniBLOC |
询价 | ||
aptchip(爱普特微) |
21+ |
模块 |
12588 |
原装正品,一级品牌代理 |
询价 |
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