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APT1001R1AN	文件：309.65 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=9.5A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
APT1001R1AVR	文件：68.34 Kbytes Page：4 Pages	PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching	ADPOW Advanced Power Technology	ADPOW
APT1001R1BN	文件：52.1 Kbytes Page：4 Pages	N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS	ADPOW Advanced Power Technology	ADPOW
APT1001R1BN	文件：359.41 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=10.5A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
APT1001R1BNR	文件：371.23 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=10.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
APT1001R1BVFR	文件：70.62 Kbytes Page：4 Pages	PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecoveryBody	ADPOW Advanced Power Technology	ADPOW
APT1001R1DN	文件：326.98 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
APT1001R1GN	文件：331.53 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=10.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
APT1001R1HN	文件：297.69 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=9.5A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
APT1001R1HVR	文件：66.93 Kbytes Page：4 Pages	PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching	ADPOW Advanced Power Technology	ADPOW
SML1001R1AN	文件：60.93 Kbytes Page：2 Pages	N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS	SEME-LAB Seme LAB	SEME-LAB

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市凌锐智能科技有限公司	APT1001R1BNG	MICROCHIP/微芯	24+	SMT	18000	诚以养德,用芯做事,全新原装原盒原标出货。	询价
深圳市纳艾斯科技有限公司	APT1001R1BNR	APT	2020+	TO-247	80000	只做自己库存,全新原装进口正品假一赔百,可开13%增	询价
无锡固电半导体股份有限公司	APT1001R1BNR	isc	2024	TO-247	30000	国产品牌isc,可替代原装	询价
深圳市威尔健半导体有限公司	APT1001R1BN其他三极管	APT	23+	TO-247	50000	全新原装正品现货,支持订货	询价
深圳市星佑电子有限公司	APT1001R1BVFR	ATP	05+	TO-247	1000	原装进口	询价
深圳市壹芯创科技有限公司	APT1001R1BVFR	APT	22+	原厂原封	8200	原装现货库存.价格优势!!	询价
深圳市维尔达电子有限公司	APT1001R1BVFR	ADVANCEDPOWE	2023+		80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价
瀚佳科技(深圳)有限公司	APT1001R1BVFR	APT	18+	TO-247	2050	公司大量全新原装正品随时可以发货	询价
深圳市兴灿科技有限公司	APT1001R1BVFR	APT	23+	TO-247	564		询价
深圳市永贝尔科技有限公司	APT1001R1BVFR	ADPOW	23+	原厂原包	19960	只做进口原装终端工厂免费送样	询价

更多APT1001R1BNG供应商更新时间2024-5-22 15:25:00

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