N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：99.04 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

Simple Drive Requirement

文件：99.04 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

Dual N-Channel Enhancement Mode MOSFET

Features • SOP-8 20V/6A , RDS(ON)=19mΩ(typ.) @ VGS=4.5V RDS(ON)=27mΩ(typ.) @ VGS=2.5V TSSOP-8 20V/6A , RDS(ON)=21mΩ(typ.) @ VGS=4.5V RDS(ON)=29mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SO-8 and TSSOP-8 Packages Applic

文件：151.09 Kbytes 页数：12 Pages

ANPEC

茂达电子

Dual N-Channel Enhancement Mode MOSFET

Features • SOP-8 20V/6A , RDS(ON)=19mΩ(typ.) @ VGS=4.5V RDS(ON)=27mΩ(typ.) @ VGS=2.5V TSSOP-8 20V/6A , RDS(ON)=21mΩ(typ.) @ VGS=4.5V RDS(ON)=29mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SO-8 and TSSOP-8 Packages Applic

文件：151.09 Kbytes 页数：12 Pages

ANPEC

茂达电子

Dual N-Channel Enhancement Mode MOSFET

Features • SOP-8 20V/6A , RDS(ON)=19mΩ(typ.) @ VGS=4.5V RDS(ON)=27mΩ(typ.) @ VGS=2.5V TSSOP-8 20V/6A , RDS(ON)=21mΩ(typ.) @ VGS=4.5V RDS(ON)=29mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SO-8 and TSSOP-8 Packages Applic

文件：151.09 Kbytes 页数：12 Pages

ANPEC

茂达电子