Front-End Solution

• Quad-band GSM/EDGE, dual-band TD-SCDMA, and TDD LTE Band 39 transmit and Receive Front-end Module with Six High Linearity/ Low Insertion Loss TRX Ports• High Efficiency   -38% for GSM850/EGSM900   -35% for DCS1800/PCS1900• 0dBm to 6dBm Drive Level• 50Ω Matched Input/Output• >50dB Dynamic r;

AIROHA

达发科技

30V N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. Features • 54 A, 3

文件：84.23 Kbytes 页数：6 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=54A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =12mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：330.58 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel Enhancement Mode Power MOSFET

Features  VDS= 30V, ID= 80A RDS(ON)

文件：2.22854 Mbytes 页数：5 Pages

Bychip

百域芯