AP6679P

P-CHANNEL ENHANCEMENT MODE

AP6679S

P-CHANNELENHANCEMENTMODE

FDMC6679AZ

P-ChannelPowerTrench짰MOSFET-30V,-20A,10m廓

FDS6679

30VoltP-ChannelPowerTrenchMOSFET

ThisP-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers,andbatterychargers.TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomparableRDS(O

FDS6679

30VoltP-ChannelPowerTrench짰MOSFET

FDS6679AZ

P-ChannelPowerTrench짰MOSFET

FDS6679AZ

P-ChannelPowerTrenchMOSFET-30V,-13A,9mOhm

GeneralDescription ThisP-ChannelMOSFETisproductedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistance. ThisdeviceiswellsuitedforPowerManagementandloadswitchingapplicationscommoninNotebookComputers

FDS6679AZ

P-Channel30V(D-S)MOSFET

APPLICATIONS •LoadSwitch •NotebookAdaptorSwitch

FDS6679AZ

P-ChannelEnhancementModeMOSFET

FEATURES -30V/-15A Rosion)=6-8MQ(Max.)@Vg=-10V Roson=13MQ(Max)@V,,=-4.5V

FDS6679AZ-NL

P-channelEnhancementModePowerMOSFET

Features VDS=-30V,ID=-12A RDS(ON)