INA2331AIPWT.B

Low-Power,Single-Supply,CMOSINSTRUMENTATIONAMPLIFIERS

FEATURES DESIGNEDFORLOWCOST HIGHGAINACCURACY:G=5,0.02%,2ppm/°C GAINSETWITHEXT.RESISTORSFOR>5V/V LOWOFFSETVOLTAGE:±250μV HIGHCMRR:94dBDC,50dBat45kHz LOWBIASCURRENT:0.5pA BANDWIDTH,SLEWRATE:2.0MHz,5V/μs RAIL-TO-RAILOUTPUTSWING:(V+)–0.02V WIDETEMPER

KSC2331

TRANSISTOR竊?NPN竊

TRANSISTOR(NPN) FEATURE Powerdissipation PCM:1WTamb=25 Collectorcurrent ICM:0.7A Collector-basevoltage V(BR)CBO:80V Operatingandstoragejunctiontemperaturerange TJTstg:-55°Cto+150°C

KSC2331

LowFrequencyAmplifier&MediumSpeedSwitching

Features •LowFrequencyAmplifier&MediumSpeedSwitching •ComplementtoKSA931 •HighCollector-BaseVoltage:VCBO=80V •CollectorCurrent:IC=700mA •CollectorDissipation:PC=1W

KSC2331

NPNLOWFREQUENCYAMPLIFIERMEDIUMSPEEDSWITCHING)

LOWFREQUENCYAMPLIFIERMEDIUMSPEEDSWITCHING •ComplementtoKSA931 •HighCollector-BaseVoltageVcso=80V •CollectorCurrentIc=700mA •CollectorDisslpationPc=1W

KSC2331

TRANSISTOR(NPN)

KSC2331

SiliconNPNtransistorinaTO-92LMPlasticPackage.

KSC2331

NPNEpitaxialSiliconTransistor

KSC2331YTA

NPNEpitaxialSiliconTransistor

LMX2331

PLLatinum??LowPowerDualFrequencySynthesizerforRFPersonalCommunications

LMX2331A

PLLatinum??DualFrequencySynthesizerforRFPersonalCommunications