Power Mosfets

Allpower

铨力微

N-Channel Enhancement Mode MOSFET

Features • 20V/12A, RDS(ON)=55mΩ(typ.) @ VGS=10V RDS(ON)=75mΩ(typ.) @ VGS=4.5V RDS(ON)=140mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design • High Power and Current Handling Capability • TO-252 and SOT-223 Packages Applications • Switching R

文件：149.5 Kbytes 页数：10 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Features · 20V/10A , RDS(ON)=55mW (typ.) @ VGS=10V RDS(ON)=75mW (typ.) @ VGS=4.5V RDS(ON)=140mW (typ.) @ VGS=2.5V · Super High Dense Cell Design · Reliable and Rugged · Lead Free Available (RoHS Compliant) Applications · Power Management in

文件：187.09 Kbytes 页数：10 Pages

ANPEC

茂达电子

N-Channel MOSFET uses advanced trench technology

文件：965.81 Kbytes 页数：5 Pages

DOINGTER

杜因特