功率放大器

The AP1110 is a 2.4~ 2.5 GHz linear, low current power amplifier fabricated with InGaP/ GaAs HBT process. Its ultra low current and small form factor make it an ideal general purpose power amplifier for 2.4GHz ISM band wireless systems requiring low current consumption and compact size components. T WLAN Applications (VCC=3.3V, Vref=2.8V)Bluetooth Applications (VCC=3.3V, Vref=2.85V);

RFIC

天芯科技

N-Channel MOSFET uses advanced trench technology

文件：1.86797 Mbytes 页数：4 Pages

DOINGTER

杜因特

N-Channel MOSFET uses advanced trench technology

文件：1.86797 Mbytes 页数：4 Pages

DOINGTER

杜因特

N-Channel 100 V (D-S) MOSFET

文件：1.01071 Mbytes 页数：7 Pages

VBSEMI

微碧半导体