零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
AOT3N100 | isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
AOT3N100 | TO220 PACKAGE MARKING DESCRIPTION | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | |
TO220 PACKAGE MARKING DESCRIPTION | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
NPN/PNPDUALEMITTERCHOPPERBI-POLARTRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
TMOSPOWERFET3.0AMPERES1000VOLTSRDS(on)=4.0OHM ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesigna | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
TMOSPOWERFET3.0AMPERES1000VOLTS TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithhigherpowerandlowerRDS(on)capabilities.ThishighvoltageMOSFETusesanadvancedterminations | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
TO220FPACKAGEMARKINGDESCRIPTION | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
TO220FPACKAGEMARKINGDESCRIPTION | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
N-ChannelEnhancementModeMOSFET | DACO DACO | DACO | ||
PolarVHVTMPowerMOSFETN-ChannelEnhancementMode | IXYS IXYS Integrated Circuits Division | IXYS | ||
N-ChannelEnhancementModePowerMOSFET | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3.0A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andAC-DCmotorcontrols | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PolarVHVTMPowerMOSFETN-ChannelEnhancementMode | IXYS IXYS Integrated Circuits Division | IXYS | ||
N-ChannelEnhancementModePowerMOSFET | IXYS IXYS Integrated Circuits Division | IXYS | ||
N-ChannelEnhancementModePowerMOSFET | IXYS IXYS Integrated Circuits Division | IXYS | ||
PolarVHVTMPowerMOSFETN-ChannelEnhancementMode | IXYS IXYS Integrated Circuits Division | IXYS | ||
HighEnergyPowerFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
TMOSPOWERFET3.0AMPERES1000VOLTS TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithhigherpowerandlowerRDS(on)capabilities.ThishighvoltageMOSFETusesanadvancedterminations | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
详细参数
- 型号:
AOT3N100
- 制造商:
Alpha & Omega Semiconductor
- 功能描述:
MOSFET N-CH 1000V 2.8A TO220
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor In |
23+ |
TO-220 |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
AOS/万代 |
22+ |
TO-220 |
7800 |
原装现货价格从优! |
询价 | ||
AOS |
23+ |
TO-220 |
700000 |
公主请下单 柒号只做原装 |
询价 | ||
AOS |
2020+ |
TO-220 |
16 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
AOS |
TO-220 |
20000 |
原装正品 |
询价 | |||
AOS |
23+ |
TO-220 |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
23+ |
N/A |
35800 |
正品授权货源可靠 |
询价 | |||
AOS |
2020+ |
TO-220 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
AOS/万代 |
21+ |
TO-220 |
3197 |
原装现货假一赔十 |
询价 | ||
AOS |
1809+ |
TO-220 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 |
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