N-Channel Enhancement Mode Field Effect Transistor

General Description The AON4420L combines advanced trench MOSFET technology with a small footprint package to provide low RDS(ON) per unit area. This device is ideal for load switch and high speed switching applications. - RoHS Compliant - Halogen Free Features VDS (V) = 30V ID = 10A (

文件：148.2 Kbytes 页数：5 Pages

AOSMD

万国半导体

低压MOSFET (12V - 30V)

N-Channel Enhancement Mode Field Effect Transistor

AOS

美国万代

Lower Gate Charge, Simple Drive Requirement

文件：98.86 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

Lower Gate Charge, Simple Drive Requirement

文件：98.86 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

N-Channel Enhancement Mode MOSFET

Features • 30V/12.5A, RDS(ON)=6mΩ(typ.) @ VGS=10V RDS(ON)=10mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SO-8 Package Applications • Power Management in Notebook Computer , Portable Equipment and Battery Powered Syst

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ANPEC

茂达电子